Real-time, in-circuit temperature sensing of an x-band gan power amplifier

Simon J. Mahon; Olivia Ell; Leigh E. Milner; Evgeny Kuxa; Anthony E. Parker; Melissa C. Gorman; Michael C. Heimlich

Real-time, in-circuit temperature sensing of an x-band gan power amplifier

Simon J. Mahon^*, Olivia Ell, Leigh E. Milner, Evgeny Kuxa, Anthony E. Parker, Melissa C. Gorman, Michael C. Heimlich

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

4 Citations (Scopus)

Abstract

A 10-watt X-band GaN power amplifier has been designed as a testbed to study amplifier temperature under a variety of biases and input drive levels using gate-resistance thermometry. Real-time, in-circuit temperature sensing is demonstrated and discussed for a range of biases and input levels.

Original language	English
Title of host publication	Proceedings of the 15th European Microwave Integrated Circuits Conference
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	37-40
Number of pages	4
ISBN (Electronic)	9782874870606
ISBN (Print)	9781728170404
Publication status	Published - 2020
Event	15th European Microwave Integrated Circuits Conference, EuMIC 2020 - Utrecht, Netherlands Duration: 11 Jan 2021 → 12 Jan 2021

Conference

Conference	15th European Microwave Integrated Circuits Conference, EuMIC 2020
Country/Territory	Netherlands
City	Utrecht
Period	11/01/21 → 12/01/21

Keywords

Gallium nitride
MMICs
power amplifier
temperature measurement

Access to Document

https://ieeexplore.ieee.org/document/9337427

Cite this

Mahon, S. J., Ell, O., Milner, L. E., Kuxa, E., Parker, A. E., Gorman, M. C., & Heimlich, M. C. (2020). Real-time, in-circuit temperature sensing of an x-band gan power amplifier. In Proceedings of the 15th European Microwave Integrated Circuits Conference (pp. 37-40). Institute of Electrical and Electronics Engineers (IEEE). https://ieeexplore.ieee.org/document/9337427

@inproceedings{ef41e132c22a4acbb444beed46e8afc0,

title = "Real-time, in-circuit temperature sensing of an x-band gan power amplifier",

abstract = "A 10-watt X-band GaN power amplifier has been designed as a testbed to study amplifier temperature under a variety of biases and input drive levels using gate-resistance thermometry. Real-time, in-circuit temperature sensing is demonstrated and discussed for a range of biases and input levels.",

keywords = "Gallium nitride, MMICs, power amplifier, temperature measurement",

author = "Mahon, {Simon J.} and Olivia Ell and Milner, {Leigh E.} and Evgeny Kuxa and Parker, {Anthony E.} and Gorman, {Melissa C.} and Heimlich, {Michael C.}",

year = "2020",

language = "English",

isbn = "9781728170404",

pages = "37--40",

booktitle = "Proceedings of the 15th European Microwave Integrated Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "15th European Microwave Integrated Circuits Conference, EuMIC 2020 ; Conference date: 11-01-2021 Through 12-01-2021",

}

Mahon, SJ, Ell, O, Milner, LE, Kuxa, E, Parker, AE , Gorman, MC & Heimlich, MC 2020, Real-time, in-circuit temperature sensing of an x-band gan power amplifier. in Proceedings of the 15th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 37-40, 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, Netherlands, 11/01/21. <https://ieeexplore.ieee.org/document/9337427>

Real-time, in-circuit temperature sensing of an x-band gan power amplifier. / Mahon, Simon J.; Ell, Olivia; Milner, Leigh E. et al.
Proceedings of the 15th European Microwave Integrated Circuits Conference. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2020. p. 37-40.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Real-time, in-circuit temperature sensing of an x-band gan power amplifier

AU - Mahon, Simon J.

AU - Ell, Olivia

AU - Milner, Leigh E.

AU - Kuxa, Evgeny

AU - Parker, Anthony E.

AU - Gorman, Melissa C.

AU - Heimlich, Michael C.

PY - 2020

Y1 - 2020

N2 - A 10-watt X-band GaN power amplifier has been designed as a testbed to study amplifier temperature under a variety of biases and input drive levels using gate-resistance thermometry. Real-time, in-circuit temperature sensing is demonstrated and discussed for a range of biases and input levels.

AB - A 10-watt X-band GaN power amplifier has been designed as a testbed to study amplifier temperature under a variety of biases and input drive levels using gate-resistance thermometry. Real-time, in-circuit temperature sensing is demonstrated and discussed for a range of biases and input levels.

KW - Gallium nitride

KW - MMICs

KW - power amplifier

KW - temperature measurement

UR - http://www.scopus.com/inward/record.url?scp=85100947855&partnerID=8YFLogxK

UR - http://purl.org/au-research/grants/arc/LP140100344

M3 - Conference proceeding contribution

AN - SCOPUS:85100947855

SN - 9781728170404

SP - 37

EP - 40

BT - Proceedings of the 15th European Microwave Integrated Circuits Conference

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 15th European Microwave Integrated Circuits Conference, EuMIC 2020

Y2 - 11 January 2021 through 12 January 2021

ER -

Real-time, in-circuit temperature sensing of an x-band gan power amplifier

Abstract

Conference

Keywords

Access to Document

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High performance, optimized chip-scale packaging for millimetre wave and THz integrated circuits

Cite this

Real-time, in-circuit temperature sensing of an x-band gan power amplifier

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Projects

High performance, optimized chip-scale packaging for millimetre wave and THz integrated circuits

Cite this