Realistic continuum hole states in Si-SiGe quantum wells

V. I. Galiev*, E. M. Goldys, A. N. Kruglov, A. F. Polupanov, T. L. Tansley

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

An efficient numerical-analytical method is presented for finding continuum states in quantum-well systems with arbitrary potential profiles, described by coupled Schrodinger equations, such as hole states in semiconductor quantum wells. The method developed is used to examine the scattering of holes in strained layer Si/Si1-xGex quantum-well heterostructures.

Original languageEnglish
Title of host publicationConference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages333-336
Number of pages4
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust
Duration: 8 Dec 199611 Dec 1996

Other

OtherProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
CityCanberra, Aust
Period8/12/9611/12/96

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