Realistic continuum hole states in Si-SiGe quantum wells

V. I. Galiev; E. M. Goldys; A. N. Kruglov; A. F. Polupanov; T. L. Tansley

Realistic continuum hole states in Si-SiGe quantum wells

V. I. Galiev^*, E. M. Goldys, A. N. Kruglov, A. F. Polupanov, T. L. Tansley

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

An efficient numerical-analytical method is presented for finding continuum states in quantum-well systems with arbitrary potential profiles, described by coupled Schrodinger equations, such as hole states in semiconductor quantum wells. The method developed is used to examine the scattering of holes in strained layer Si/Si_1-xGe_x quantum-well heterostructures.

Original language	English
Title of host publication	Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	333-336
Number of pages	4
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: 8 Dec 1996 → 11 Dec 1996

Other

Other	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
City	Canberra, Aust
Period	8/12/96 → 11/12/96

Cite this

@inproceedings{629b43cc7b0d446b9f12d8fd2298e0b7,

title = "Realistic continuum hole states in Si-SiGe quantum wells",

abstract = "An efficient numerical-analytical method is presented for finding continuum states in quantum-well systems with arbitrary potential profiles, described by coupled Schrodinger equations, such as hole states in semiconductor quantum wells. The method developed is used to examine the scattering of holes in strained layer Si/Si1-xGex quantum-well heterostructures.",

author = "Galiev, {V. I.} and Goldys, {E. M.} and Kruglov, {A. N.} and Polupanov, {A. F.} and Tansley, {T. L.}",

year = "1996",

language = "English",

pages = "333--336",

booktitle = "Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

Galiev, VI, Goldys, EM, Kruglov, AN, Polupanov, AF & Tansley, TL 1996, Realistic continuum hole states in Si-SiGe quantum wells. in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 333-336, Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, 8/12/96.

Realistic continuum hole states in Si-SiGe quantum wells. / Galiev, V. I.; Goldys, E. M.; Kruglov, A. N. et al.
Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 1996. p. 333-336.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Realistic continuum hole states in Si-SiGe quantum wells

AU - Galiev, V. I.

AU - Goldys, E. M.

AU - Kruglov, A. N.

AU - Polupanov, A. F.

AU - Tansley, T. L.

PY - 1996

Y1 - 1996

N2 - An efficient numerical-analytical method is presented for finding continuum states in quantum-well systems with arbitrary potential profiles, described by coupled Schrodinger equations, such as hole states in semiconductor quantum wells. The method developed is used to examine the scattering of holes in strained layer Si/Si1-xGex quantum-well heterostructures.

AB - An efficient numerical-analytical method is presented for finding continuum states in quantum-well systems with arbitrary potential profiles, described by coupled Schrodinger equations, such as hole states in semiconductor quantum wells. The method developed is used to examine the scattering of holes in strained layer Si/Si1-xGex quantum-well heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=0030371558&partnerID=8YFLogxK

M3 - Conference proceeding contribution

AN - SCOPUS:0030371558

SP - 333

EP - 336

BT - Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD

Y2 - 8 December 1996 through 11 December 1996

ER -

Realistic continuum hole states in Si-SiGe quantum wells

Abstract

Other

Other files and links

Fingerprint

Cite this