Realistic large-signal MESFET model for SPICE

Anthony E. Parker*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

A large-signal MESFET model, implemented with new techniques, has continuity and rate dependence. These features provide accurate prediction of circuit gain and distortion. The techniques also improve simulation speed. The model has improved descriptions of capacitance and bias dependence. It has small-signal S-parameter accuracy extended to a wide range of operating conditions. This model is now in several simulators including Pspice v6.2.

Original languageEnglish
Pages (from-to)1763-1766
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
Publication statusPublished - 1996

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