A large-signal MESFET model, implemented with new techniques, has continuity and rate dependence. These features provide accurate prediction of circuit gain and distortion. The techniques also improve simulation speed. The model has improved descriptions of capacitance and bias dependence. It has small-signal S-parameter accuracy extended to a wide range of operating conditions. This model is now in several simulators including Pspice v6.2.
|Number of pages
|IEEE MTT-S International Microwave Symposium Digest
|Published - 1996