TY - JOUR
T1 - Recent progress in short- to long-wave infrared photodetection using 2D materials and heterostructures
AU - Guan, Xinwei
AU - Yu, Xuechao
AU - Periyanagounder, Dharmaraj
AU - Benzigar, Mercy Rose
AU - Huang, Jing-Kai
AU - Lin, Chun-Ho
AU - Kim, Jiyun
AU - Singh, Simrjit
AU - Hu, Long
AU - Liu, Guozhen
AU - Li, Dehui
AU - He, Jr-Hau
AU - Yan, Feng
AU - Wang, Qi Jie
AU - Wu, Tom
PY - 2021/2/18
Y1 - 2021/2/18
N2 - The extraordinary electronic, optical, and mechanical characteristics of 2D materials make them promising candidates for optoelectronics, specifically in infrared (IR) detectors owing to their flexible composition and tunable optoelectronic properties. This review presents the recent progress in IR detectors composed of 2D materials and their hybrid structures, including graphene, black phosphorous, transition metal dichalcogenides, halide perovskite as well as other new layered materials and their heterostructures. The focus is on the short-wave, mid-wave, and long-wave infrared regimes, which pose a grand challenge for rational materials and device designs. The dependence of the device performance on the optical and electronic properties of 2D materials is extensively discussed, aiming to present the general strategies for designing optoelectronic devices with optimal performance. Furthermore, the recent results on 2D material-based heterostructures are presented with an emphasis on the relationship between band alignment, charge transfer, and IR photodetection. Finally, a summary is given as well as the discussion of existing challenges and future directions.
AB - The extraordinary electronic, optical, and mechanical characteristics of 2D materials make them promising candidates for optoelectronics, specifically in infrared (IR) detectors owing to their flexible composition and tunable optoelectronic properties. This review presents the recent progress in IR detectors composed of 2D materials and their hybrid structures, including graphene, black phosphorous, transition metal dichalcogenides, halide perovskite as well as other new layered materials and their heterostructures. The focus is on the short-wave, mid-wave, and long-wave infrared regimes, which pose a grand challenge for rational materials and device designs. The dependence of the device performance on the optical and electronic properties of 2D materials is extensively discussed, aiming to present the general strategies for designing optoelectronic devices with optimal performance. Furthermore, the recent results on 2D material-based heterostructures are presented with an emphasis on the relationship between band alignment, charge transfer, and IR photodetection. Finally, a summary is given as well as the discussion of existing challenges and future directions.
KW - 2D materials
KW - device architecture
KW - heterostructures
KW - long-wave infrared, mid-wave infrared
KW - photodetectors, short-wave infrared
UR - http://www.scopus.com/inward/record.url?scp=85097016134&partnerID=8YFLogxK
U2 - 10.1002/adom.202001708
DO - 10.1002/adom.202001708
M3 - Review article
AN - SCOPUS:85097016134
VL - 9
SP - 1
EP - 24
JO - Advanced Optical Materials
JF - Advanced Optical Materials
SN - 2195-1071
IS - 4
M1 - 2001708
ER -