Reconsideration of the gallium nitride

dual functionality as an electron transporter and transparent conductor for recyclable polymer solar cell substrate applications

Kwang Jae Lee, Sang Eun Yoon, Gyeong G. Jeon, Sung Hoon Jung, Tae Hoon Jung, Namchul Cho, Jae Sung Yun, Jincheol Kim, Anita W. Y. Ho-Baillie, Jong Hyeob Baek*, Myungkwan Song, Jong H. Kim

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Herein, we report the dual functionality of a single n-type gallium nitride (n-GaN) layer as an electron transporter and transparent conductor, which has applications in reusable organic solar cells. After silicon doping with an optimized electron concentration, thin-film layer of GaN showed exceptional electrical properties including charge carrier mobility of 161 cm2 V−1s−1, electrical conductivity of 1.4ⅹ106 S cm−1, and sheet resistance of 11.1 Ω cm−2. Organic solar cells based on n-GaN exhibited power conversion efficiency comparable to those based on a conventional ITO/ZnO bilayered cathode. Furthermore, the n-GaN substrates exhibited reusability; due to excellent chemical stability of n-GaN, the reconstructed organic solar cells maintained their initial performance after the substrates were recycled. We suggest a new type of reusable n-GaN cathode layer featuring an integrated electron transporting layer and transparent electrode.

Original languageEnglish
Article number109971
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume200
DOIs
Publication statusPublished - 15 Sep 2019
Externally publishedYes

Keywords

  • Gallium nitride
  • Charge transport layer
  • Transparent electrode
  • Doping
  • Recyclable substrate

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