Reduced-size E-band GaAs power amplifier MMIC

A. Bessemoulin; J. Tarazi; M. Rodriguez; M. G. McCulloch; A. E. Parker; S. J. Mahon

doi:10.1109/EuMIC.2015.7345059

Reduced-size E-band GaAs power amplifier MMIC

A. Bessemoulin, J. Tarazi, M. Rodriguez, M. G. McCulloch, A. E. Parker, S. J. Mahon

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

7 Citations (Scopus)

Abstract

We report on the development and performance of a very compact GaAs Power Amplifier MMIC for E-band communication systems. With a remarkably small chip size of only 3.7 mm2, this amplifier achieves a measured small signal gain of 26 dB over the 71-76 GHz PtP band, with +28 dBm output power at 1-dB gain compression (P1dB), and over 1 Watt output power in saturation (Psat) and up to 28-% PAE. This power and gain performance outperforms previously reported results for PAs operating in the 71 to 86 GHz span of the ETSI E bands for any semiconductor system. To the author's knowledge these results also represent the highest output power levels and power density per gate periphery and chip area ever achieved for any GaAs MMICs at these frequencies (i.e. 500 to 850 mW/mm). This record measured performance also competes favorably well with millimeter-wave PA MMICs realized in GaN technologies.

Original language	English
Title of host publication	European Microwave Week 2015
Subtitle of host publication	"Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 10th European Microwave Integrated Circuits Conference Proceedings, EuMIC
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	25-28
Number of pages	4
ISBN (Electronic)	9782874870408
ISBN (Print)	9781467380072
DOIs	https://doi.org/10.1109/EuMIC.2015.7345059
Publication status	Published - 2 Dec 2015
Event	10th European Microwave Integrated Circuits Conference, EuMIC 2015 - Paris, France Duration: 7 Sept 2015 → 8 Sept 2015

Other

Other	10th European Microwave Integrated Circuits Conference, EuMIC 2015
Country/Territory	France
City	Paris
Period	7/09/15 → 8/09/15

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10.1109/EuMIC.2015.7345059

Cite this

Bessemoulin, A., Tarazi, J., Rodriguez, M., McCulloch, M. G., Parker, A. E., & Mahon, S. J. (2015). Reduced-size E-band GaAs power amplifier MMIC. In European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 10th European Microwave Integrated Circuits Conference Proceedings, EuMIC (pp. 25-28). [7345059] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/EuMIC.2015.7345059

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title = "Reduced-size E-band GaAs power amplifier MMIC",

abstract = "We report on the development and performance of a very compact GaAs Power Amplifier MMIC for E-band communication systems. With a remarkably small chip size of only 3.7 mm2, this amplifier achieves a measured small signal gain of 26 dB over the 71-76 GHz PtP band, with +28 dBm output power at 1-dB gain compression (P1dB), and over 1 Watt output power in saturation (Psat) and up to 28-% PAE. This power and gain performance outperforms previously reported results for PAs operating in the 71 to 86 GHz span of the ETSI E bands for any semiconductor system. To the author's knowledge these results also represent the highest output power levels and power density per gate periphery and chip area ever achieved for any GaAs MMICs at these frequencies (i.e. 500 to 850 mW/mm). This record measured performance also competes favorably well with millimeter-wave PA MMICs realized in GaN technologies.",

author = "A. Bessemoulin and J. Tarazi and M. Rodriguez and McCulloch, {M. G.} and Parker, {A. E.} and Mahon, {S. J.}",

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Bessemoulin, A, Tarazi, J, Rodriguez, M, McCulloch, MG, Parker, AE & Mahon, SJ 2015, Reduced-size E-band GaAs power amplifier MMIC. in European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 10th European Microwave Integrated Circuits Conference Proceedings, EuMIC., 7345059, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 25-28, 10th European Microwave Integrated Circuits Conference, EuMIC 2015, Paris, France, 7/09/15. https://doi.org/10.1109/EuMIC.2015.7345059

Reduced-size E-band GaAs power amplifier MMIC. / Bessemoulin, A.; Tarazi, J.; Rodriguez, M. et al.
European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 10th European Microwave Integrated Circuits Conference Proceedings, EuMIC. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 25-28 7345059.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - Reduced-size E-band GaAs power amplifier MMIC

AU - Bessemoulin, A.

AU - Tarazi, J.

AU - Rodriguez, M.

AU - McCulloch, M. G.

AU - Parker, A. E.

AU - Mahon, S. J.

PY - 2015/12/2

Y1 - 2015/12/2

N2 - We report on the development and performance of a very compact GaAs Power Amplifier MMIC for E-band communication systems. With a remarkably small chip size of only 3.7 mm2, this amplifier achieves a measured small signal gain of 26 dB over the 71-76 GHz PtP band, with +28 dBm output power at 1-dB gain compression (P1dB), and over 1 Watt output power in saturation (Psat) and up to 28-% PAE. This power and gain performance outperforms previously reported results for PAs operating in the 71 to 86 GHz span of the ETSI E bands for any semiconductor system. To the author's knowledge these results also represent the highest output power levels and power density per gate periphery and chip area ever achieved for any GaAs MMICs at these frequencies (i.e. 500 to 850 mW/mm). This record measured performance also competes favorably well with millimeter-wave PA MMICs realized in GaN technologies.

AB - We report on the development and performance of a very compact GaAs Power Amplifier MMIC for E-band communication systems. With a remarkably small chip size of only 3.7 mm2, this amplifier achieves a measured small signal gain of 26 dB over the 71-76 GHz PtP band, with +28 dBm output power at 1-dB gain compression (P1dB), and over 1 Watt output power in saturation (Psat) and up to 28-% PAE. This power and gain performance outperforms previously reported results for PAs operating in the 71 to 86 GHz span of the ETSI E bands for any semiconductor system. To the author's knowledge these results also represent the highest output power levels and power density per gate periphery and chip area ever achieved for any GaAs MMICs at these frequencies (i.e. 500 to 850 mW/mm). This record measured performance also competes favorably well with millimeter-wave PA MMICs realized in GaN technologies.

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Bessemoulin A, Tarazi J, Rodriguez M, McCulloch MG, Parker AE, Mahon SJ. Reduced-size E-band GaAs power amplifier MMIC. In European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 10th European Microwave Integrated Circuits Conference Proceedings, EuMIC. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2015. p. 25-28. 7345059 doi: 10.1109/EuMIC.2015.7345059

Reduced-size E-band GaAs power amplifier MMIC

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