Reduction of threading dislocation density in sputtered Ge/Si(100) epitaxial films by continuous-wave diode laser-induced recrystallization

Ziheng Liu; Xiaojing Hao; Jialiang Huang; Anita Ho-Baillie; Martin A. Green

doi:10.1021/acsaem.7b00130

Reduction of threading dislocation density in sputtered Ge/Si(100) epitaxial films by continuous-wave diode laser-induced recrystallization

Ziheng Liu^*, Xiaojing Hao, Jialiang Huang, Anita Ho-Baillie, Martin A. Green

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have developed a cost-effective, up-scalable, and high-throughput method combining continuous-wave (CW) diode laser and magnetron sputtering for fabricating low-defect single-crystalline Ge films for high-efficiency III-V solar cell applications. CW diode laser-induced recrystallization is demonstrated to dramatically reduce the threading dislocation density (TDD) of sputter-deposited single-crystalline Ge/Si epitaxial films by more than 3 orders of magnitude. This might be due to the change of growth mechanism from initial Ge/Si heteroepitaxy in the sputtering process to Ge/Ge homoepitaxy by the laser-induced lateral recrystallization process, overcoming the typical issue of Ge/Si lattice mismatch to achieve low TDD.

Original language	English
Pages (from-to)	1893-1897
Number of pages	5
Journal	ACS Applied Energy Materials
Volume	1
Issue number	5
DOIs	https://doi.org/10.1021/acsaem.7b00130
Publication status	Published - 29 May 2018
Externally published	Yes

Keywords

epitaxial Ge films
defect reduction
continuous-wave diode laser
recrystallization
magnetron sputtering

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10.1021/acsaem.7b00130

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title = "Reduction of threading dislocation density in sputtered Ge/Si(100) epitaxial films by continuous-wave diode laser-induced recrystallization",

abstract = "We have developed a cost-effective, up-scalable, and high-throughput method combining continuous-wave (CW) diode laser and magnetron sputtering for fabricating low-defect single-crystalline Ge films for high-efficiency III-V solar cell applications. CW diode laser-induced recrystallization is demonstrated to dramatically reduce the threading dislocation density (TDD) of sputter-deposited single-crystalline Ge/Si epitaxial films by more than 3 orders of magnitude. This might be due to the change of growth mechanism from initial Ge/Si heteroepitaxy in the sputtering process to Ge/Ge homoepitaxy by the laser-induced lateral recrystallization process, overcoming the typical issue of Ge/Si lattice mismatch to achieve low TDD.",

keywords = "epitaxial Ge films, defect reduction, continuous-wave diode laser, recrystallization, magnetron sputtering",

author = "Ziheng Liu and Xiaojing Hao and Jialiang Huang and Anita Ho-Baillie and Green, {Martin A.}",

year = "2018",

month = may,

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doi = "10.1021/acsaem.7b00130",

language = "English",

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journal = "ACS Applied Energy Materials",

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TY - JOUR

T1 - Reduction of threading dislocation density in sputtered Ge/Si(100) epitaxial films by continuous-wave diode laser-induced recrystallization

AU - Liu, Ziheng

AU - Hao, Xiaojing

AU - Huang, Jialiang

AU - Ho-Baillie, Anita

AU - Green, Martin A.

PY - 2018/5/29

Y1 - 2018/5/29

N2 - We have developed a cost-effective, up-scalable, and high-throughput method combining continuous-wave (CW) diode laser and magnetron sputtering for fabricating low-defect single-crystalline Ge films for high-efficiency III-V solar cell applications. CW diode laser-induced recrystallization is demonstrated to dramatically reduce the threading dislocation density (TDD) of sputter-deposited single-crystalline Ge/Si epitaxial films by more than 3 orders of magnitude. This might be due to the change of growth mechanism from initial Ge/Si heteroepitaxy in the sputtering process to Ge/Ge homoepitaxy by the laser-induced lateral recrystallization process, overcoming the typical issue of Ge/Si lattice mismatch to achieve low TDD.

AB - We have developed a cost-effective, up-scalable, and high-throughput method combining continuous-wave (CW) diode laser and magnetron sputtering for fabricating low-defect single-crystalline Ge films for high-efficiency III-V solar cell applications. CW diode laser-induced recrystallization is demonstrated to dramatically reduce the threading dislocation density (TDD) of sputter-deposited single-crystalline Ge/Si epitaxial films by more than 3 orders of magnitude. This might be due to the change of growth mechanism from initial Ge/Si heteroepitaxy in the sputtering process to Ge/Ge homoepitaxy by the laser-induced lateral recrystallization process, overcoming the typical issue of Ge/Si lattice mismatch to achieve low TDD.

KW - epitaxial Ge films

KW - defect reduction

KW - continuous-wave diode laser

KW - recrystallization

KW - magnetron sputtering

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UR - http://purl.org/au-research/grants/arc/DP160103433

U2 - 10.1021/acsaem.7b00130

DO - 10.1021/acsaem.7b00130

M3 - Article

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SN - 2574-0962

VL - 1

SP - 1893

EP - 1897

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

IS - 5

ER -

Reduction of threading dislocation density in sputtered Ge/Si(100) epitaxial films by continuous-wave diode laser-induced recrystallization

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Keywords

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