Reduction of threading dislocation density in sputtered Ge/Si(100) epitaxial films by continuous-wave diode laser-induced recrystallization

Ziheng Liu*, Xiaojing Hao, Jialiang Huang, Anita Ho-Baillie, Martin A. Green

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have developed a cost-effective, up-scalable, and high-throughput method combining continuous-wave (CW) diode laser and magnetron sputtering for fabricating low-defect single-crystalline Ge films for high-efficiency III-V solar cell applications. CW diode laser-induced recrystallization is demonstrated to dramatically reduce the threading dislocation density (TDD) of sputter-deposited single-crystalline Ge/Si epitaxial films by more than 3 orders of magnitude. This might be due to the change of growth mechanism from initial Ge/Si heteroepitaxy in the sputtering process to Ge/Ge homoepitaxy by the laser-induced lateral recrystallization process, overcoming the typical issue of Ge/Si lattice mismatch to achieve low TDD.

Original languageEnglish
Pages (from-to)1893-1897
Number of pages5
JournalACS Applied Energy Materials
Volume1
Issue number5
DOIs
Publication statusPublished - 29 May 2018
Externally publishedYes

Keywords

  • epitaxial Ge films
  • defect reduction
  • continuous-wave diode laser
  • recrystallization
  • magnetron sputtering

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