Relating dynamics of FET behavior to operating regions

Anthony E. Parker, James G. Rathmell

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    2 Citations (Scopus)

    Abstract

    Dispersion effects and the operating regions they effect are identified in a HEMT and a MESFET. Largesignal pulse and small-signal RF measurements reveal a simple structure to the otherwise complicated dynamic behavior of the FETs. A simple model demonstrates how heating, impact ionization, and leakage currents can contribute to this behavior and that each has an effect in specific regions of bias and operating frequency. It is possible to identify operating conditions that will or will not be affected by dispersion with measurements over a wide range of frequencies from dc to microwave and a range of terminal potentials.

    Original languageEnglish
    Title of host publication58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001
    EditorsStevenson Kenney, David Root
    Place of PublicationPiscataway, N.J.
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages1-10
    Number of pages10
    ISBN (Print)0780356861, 9780780356863
    DOIs
    Publication statusPublished - Nov 2001
    Event58th Automatic RF Techniques Group Conference, ARFTG Fall - 2001 - San Diego, United States
    Duration: 29 Nov 200130 Nov 2001

    Other

    Other58th Automatic RF Techniques Group Conference, ARFTG Fall - 2001
    Country/TerritoryUnited States
    CitySan Diego
    Period29/11/0130/11/01

    Keywords

    • Dispersion
    • FETs
    • Heating
    • HEMTs
    • Impact ionization
    • Leakage current
    • MESFETs
    • Pulse measurements
    • Radio frequency
    • Radiofrequency identification

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