Relating dynamics of FET behavior to operating regions

Anthony E. Parker; James G. Rathmell

doi:10.1109/ARFTG.2001.327499

Relating dynamics of FET behavior to operating regions

Anthony E. Parker, James G. Rathmell

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

Abstract

Dispersion effects and the operating regions they effect are identified in a HEMT and a MESFET. Largesignal pulse and small-signal RF measurements reveal a simple structure to the otherwise complicated dynamic behavior of the FETs. A simple model demonstrates how heating, impact ionization, and leakage currents can contribute to this behavior and that each has an effect in specific regions of bias and operating frequency. It is possible to identify operating conditions that will or will not be affected by dispersion with measurements over a wide range of frequencies from dc to microwave and a range of terminal potentials.

Original language	English
Title of host publication	58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001
Editors	Stevenson Kenney, David Root
Place of Publication	Piscataway, N.J.
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-10
Number of pages	10
ISBN (Print)	0780356861, 9780780356863
DOIs	https://doi.org/10.1109/ARFTG.2001.327499
Publication status	Published - Nov 2001
Event	58th Automatic RF Techniques Group Conference, ARFTG Fall - 2001 - San Diego, United States Duration: 29 Nov 2001 → 30 Nov 2001

Other

Other	58th Automatic RF Techniques Group Conference, ARFTG Fall - 2001
Country/Territory	United States
City	San Diego
Period	29/11/01 → 30/11/01

Keywords

Dispersion
FETs
Heating
HEMTs
Impact ionization
Leakage current
MESFETs
Pulse measurements
Radio frequency
Radiofrequency identification

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10.1109/ARFTG.2001.327499

Cite this

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title = "Relating dynamics of FET behavior to operating regions",

abstract = "Dispersion effects and the operating regions they effect are identified in a HEMT and a MESFET. Largesignal pulse and small-signal RF measurements reveal a simple structure to the otherwise complicated dynamic behavior of the FETs. A simple model demonstrates how heating, impact ionization, and leakage currents can contribute to this behavior and that each has an effect in specific regions of bias and operating frequency. It is possible to identify operating conditions that will or will not be affected by dispersion with measurements over a wide range of frequencies from dc to microwave and a range of terminal potentials.",

keywords = "Dispersion, FETs, Heating, HEMTs, Impact ionization, Leakage current, MESFETs, Pulse measurements, Radio frequency, Radiofrequency identification",

author = "Parker, {Anthony E.} and Rathmell, {James G.}",

year = "2001",

month = nov,

doi = "10.1109/ARFTG.2001.327499",

language = "English",

isbn = "0780356861",

pages = "1--10",

editor = "Stevenson Kenney and David Root",

booktitle = "58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "58th Automatic RF Techniques Group Conference, ARFTG Fall - 2001 ; Conference date: 29-11-2001 Through 30-11-2001",

}

Parker, AE & Rathmell, JG 2001, Relating dynamics of FET behavior to operating regions. in S Kenney & D Root (eds), 58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001., 4120202, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, N.J., pp. 1-10, 58th Automatic RF Techniques Group Conference, ARFTG Fall - 2001, San Diego, California, United States, 29/11/01. https://doi.org/10.1109/ARFTG.2001.327499

Relating dynamics of FET behavior to operating regions. / Parker, Anthony E.; Rathmell, James G.

58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001. ed. / Stevenson Kenney; David Root. Piscataway, N.J. : Institute of Electrical and Electronics Engineers (IEEE), 2001. p. 1-10 4120202.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Parker, Anthony E.

AU - Rathmell, James G.

PY - 2001/11

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N2 - Dispersion effects and the operating regions they effect are identified in a HEMT and a MESFET. Largesignal pulse and small-signal RF measurements reveal a simple structure to the otherwise complicated dynamic behavior of the FETs. A simple model demonstrates how heating, impact ionization, and leakage currents can contribute to this behavior and that each has an effect in specific regions of bias and operating frequency. It is possible to identify operating conditions that will or will not be affected by dispersion with measurements over a wide range of frequencies from dc to microwave and a range of terminal potentials.

AB - Dispersion effects and the operating regions they effect are identified in a HEMT and a MESFET. Largesignal pulse and small-signal RF measurements reveal a simple structure to the otherwise complicated dynamic behavior of the FETs. A simple model demonstrates how heating, impact ionization, and leakage currents can contribute to this behavior and that each has an effect in specific regions of bias and operating frequency. It is possible to identify operating conditions that will or will not be affected by dispersion with measurements over a wide range of frequencies from dc to microwave and a range of terminal potentials.

KW - Dispersion

KW - FETs

KW - Heating

KW - HEMTs

KW - Impact ionization

KW - Leakage current

KW - MESFETs

KW - Pulse measurements

KW - Radio frequency

KW - Radiofrequency identification

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CY - Piscataway, N.J.

T2 - 58th Automatic RF Techniques Group Conference, ARFTG Fall - 2001

Y2 - 29 November 2001 through 30 November 2001

ER -

Relating dynamics of FET behavior to operating regions

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