Relating dynamics of FET behavior to operating regions

Anthony E. Parker, James G. Rathmell

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

2 Citations (Scopus)

Abstract

Dispersion effects and the operating regions they effect are identified in a HEMT and a MESFET. Largesignal pulse and small-signal RF measurements reveal a simple structure to the otherwise complicated dynamic behavior of the FETs. A simple model demonstrates how heating, impact ionization, and leakage currents can contribute to this behavior and that each has an effect in specific regions of bias and operating frequency. It is possible to identify operating conditions that will or will not be affected by dispersion with measurements over a wide range of frequencies from dc to microwave and a range of terminal potentials.

Original languageEnglish
Title of host publication58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001
EditorsStevenson Kenney, David Root
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-10
Number of pages10
ISBN (Print)0780356861, 9780780356863
DOIs
Publication statusPublished - Nov 2001
Event58th Automatic RF Techniques Group Conference, ARFTG Fall - 2001 - San Diego, United States
Duration: 29 Nov 200130 Nov 2001

Other

Other58th Automatic RF Techniques Group Conference, ARFTG Fall - 2001
CountryUnited States
CitySan Diego
Period29/11/0130/11/01

Keywords

  • Dispersion
  • FETs
  • Heating
  • HEMTs
  • Impact ionization
  • Leakage current
  • MESFETs
  • Pulse measurements
  • Radio frequency
  • Radiofrequency identification

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