Abstract
Dispersion effects and the operating regions they effect are identified in a HEMT and a MESFET. Largesignal pulse and small-signal RF measurements reveal a simple structure to the otherwise complicated dynamic behavior of the FETs. A simple model demonstrates how heating, impact ionization, and leakage currents can contribute to this behavior and that each has an effect in specific regions of bias and operating frequency. It is possible to identify operating conditions that will or will not be affected by dispersion with measurements over a wide range of frequencies from dc to microwave and a range of terminal potentials.
Original language | English |
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Title of host publication | 58th ARFTG Conference Digest Fall 2001: RF Measurements for a Wireless World, ARFTG Fall 2001 |
Editors | Stevenson Kenney, David Root |
Place of Publication | Piscataway, N.J. |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 1-10 |
Number of pages | 10 |
ISBN (Print) | 0780356861, 9780780356863 |
DOIs | |
Publication status | Published - Nov 2001 |
Event | 58th Automatic RF Techniques Group Conference, ARFTG Fall - 2001 - San Diego, United States Duration: 29 Nov 2001 → 30 Nov 2001 |
Other
Other | 58th Automatic RF Techniques Group Conference, ARFTG Fall - 2001 |
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Country/Territory | United States |
City | San Diego |
Period | 29/11/01 → 30/11/01 |
Keywords
- Dispersion
- FETs
- Heating
- HEMTs
- Impact ionization
- Leakage current
- MESFETs
- Pulse measurements
- Radio frequency
- Radiofrequency identification