Scanning and spot-mode cathodoluminescence investigations of homo-and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.
|Number of pages||6|
|Journal||Acta Physica Polonica A|
|Publication status||Published - Oct 2002|
|Event||XXXI International School on the Physics of Semiconducting Compounds - Jaszowiec, Poland|
Duration: 7 Jun 2002 → 14 Jun 2002