Relationship between sample morphology and carrier diffusion length in GaN thin films

M. Godlewski*, E. M. Goldys, M. Phillips, T. Böttcher, S. Flgge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczynski, P. Perlin, P. Wisniewski, T. Suski, M. Bockowski, I. Grzegory, S. Porowski

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Scanning and spot-mode cathodoluminescence investigations of homo-and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.

Original languageEnglish
Pages (from-to)627-632
Number of pages6
JournalActa Physica Polonica A
Volume102
Issue number4-5
DOIs
Publication statusPublished - Oct 2002
EventXXXI International School on the Physics of Semiconducting Compounds - Jaszowiec, Poland
Duration: 7 Jun 200214 Jun 2002

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