Relationship between sample morphology and carrier diffusion length in GaN thin films

M. Godlewski; E. M. Goldys; M. Phillips; T. Böttcher; S. Flgge; D. Hommel; R. Czernecki; P. Prystawko; M. Leszczynski; P. Perlin; P. Wisniewski; T. Suski; M. Bockowski; I. Grzegory; S. Porowski

doi:10.12693/APhysPolA.102.627

Relationship between sample morphology and carrier diffusion length in GaN thin films

M. Godlewski^*, E. M. Goldys, M. Phillips, T. Böttcher, S. Flgge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczynski, P. Perlin, P. Wisniewski, T. Suski, M. Bockowski, I. Grzegory, S. Porowski

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Scanning and spot-mode cathodoluminescence investigations of homo-and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.

Original language	English
Pages (from-to)	627-632
Number of pages	6
Journal	Acta Physica Polonica A
Volume	102
Issue number	4-5
DOIs	https://doi.org/10.12693/APhysPolA.102.627
Publication status	Published - Oct 2002
Event	XXXI International School on the Physics of Semiconducting Compounds - Jaszowiec, Poland Duration: 7 Jun 2002 → 14 Jun 2002

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Godlewski, M., Goldys, E. M., Phillips, M., Böttcher, T., Flgge, S., Hommel, D., Czernecki, R., Prystawko, P., Leszczynski, M., Perlin, P., Wisniewski, P., Suski, T., Bockowski, M., Grzegory, I., & Porowski, S. (2002). Relationship between sample morphology and carrier diffusion length in GaN thin films. Acta Physica Polonica A, 102(4-5), 627-632. https://doi.org/10.12693/APhysPolA.102.627

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title = "Relationship between sample morphology and carrier diffusion length in GaN thin films",

abstract = "Scanning and spot-mode cathodoluminescence investigations of homo-and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.",

author = "M. Godlewski and Goldys, {E. M.} and M. Phillips and T. B{\"o}ttcher and S. Flgge and D. Hommel and R. Czernecki and P. Prystawko and M. Leszczynski and P. Perlin and P. Wisniewski and T. Suski and M. Bockowski and I. Grzegory and S. Porowski",

year = "2002",

month = oct,

doi = "10.12693/APhysPolA.102.627",

language = "English",

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journal = "Acta Physica Polonica A",

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Godlewski, M, Goldys, EM, Phillips, M, Böttcher, T, Flgge, S, Hommel, D, Czernecki, R, Prystawko, P, Leszczynski, M, Perlin, P, Wisniewski, P, Suski, T, Bockowski, M, Grzegory, I & Porowski, S 2002, 'Relationship between sample morphology and carrier diffusion length in GaN thin films', Acta Physica Polonica A, vol. 102, no. 4-5, pp. 627-632. https://doi.org/10.12693/APhysPolA.102.627

TY - JOUR

T1 - Relationship between sample morphology and carrier diffusion length in GaN thin films

AU - Godlewski, M.

AU - Goldys, E. M.

AU - Phillips, M.

AU - Böttcher, T.

AU - Flgge, S.

AU - Hommel, D.

AU - Czernecki, R.

AU - Prystawko, P.

AU - Leszczynski, M.

AU - Perlin, P.

AU - Wisniewski, P.

AU - Suski, T.

AU - Bockowski, M.

AU - Grzegory, I.

AU - Porowski, S.

PY - 2002/10

Y1 - 2002/10

N2 - Scanning and spot-mode cathodoluminescence investigations of homo-and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.

AB - Scanning and spot-mode cathodoluminescence investigations of homo-and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.

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U2 - 10.12693/APhysPolA.102.627

DO - 10.12693/APhysPolA.102.627

M3 - Article

AN - SCOPUS:31244434235

SN - 0587-4246

VL - 102

SP - 627

EP - 632

JO - Acta Physica Polonica A

JF - Acta Physica Polonica A

IS - 4-5

T2 - XXXI International School on the Physics of Semiconducting Compounds

Y2 - 7 June 2002 through 14 June 2002

ER -

Relationship between sample morphology and carrier diffusion length in GaN thin films

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