Resistive switching in polyvinylpyrrolidone/molybdenum disulfide composite-based memory devices

Z. W. Dlamini*, S. Vallabhapurapu, A. Srinivasan, S. Wu, V. S. Vallabhapurapu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Four types of resistive random access memory structures with an active layer comprising: (1) MoS2 (device A), (2) PVP (device B), (3) PVP and MoS2 bilayer (device C), and (4) PVP + MoS2 nanocomposites with 10 (device D), 20 (device E), 30 (device F) and 40 wt% (device G) MoS2, have been fabricated with Al and Ag as bottom and top electrodes, respectively. A study of resistive switching and electrical conduction mechanisms of these resistive random access memory modules revealed that devices A and B did not exhibit switching characteristics. Device C showed a combination of bipolar and threshold switching with a low switching voltage of 0.40 V. Device G portrayed bipolar switching at 0.56 V. In device C, space charge-limited conduction with a transition voltage Vtr = 0.24 V was observed, whereas in device G, Ohmic behaviour between 0.0 and 0.22 V, followed by trapping of charge in the 0.22-0.56 V regime before switching, was noticed. Both devices C and G showed a reasonable (≥ 102) ON/OFF ratio. In nanocomposite devices, an increase in MoS2 content resulted in an increase in electrical conductivity in the Ohmic region, leading to threshold switching at 30 wt% (device F) and ultimately bipolar switching at 40 wt% (device G). These studies have shown that both switching and conduction mechanisms are sensitive to the type and composition of the active layer in the devices studied.

Original languageEnglish
Pages (from-to)439-444
Number of pages6
JournalActa Physica Polonica A
Issue number5
Publication statusPublished - May 2022


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