Abstract
The resonant state of the shallow donor has been observed in the infrared photoconductivity spectra of n-GaP. The minimum in photoconductivity per absorbed photon near the resonant state energy is interpreted as being due to the resonance scattering of nonequilibrium photoexcited carriers.
Original language | English |
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Pages (from-to) | 959-962 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 72 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1989 |
Externally published | Yes |