Resonance scattering of photoexcited electrons in n-GaP

Dang Ngoc Khanh; E. Goldys; M. Grynberg

doi:10.1016/0038-1098(89)90436-5

Resonance scattering of photoexcited electrons in n-GaP

Dang Ngoc Khanh^*, E. Goldys, M. Grynberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The resonant state of the shallow donor has been observed in the infrared photoconductivity spectra of n-GaP. The minimum in photoconductivity per absorbed photon near the resonant state energy is interpreted as being due to the resonance scattering of nonequilibrium photoexcited carriers.

Original language	English
Pages (from-to)	959-962
Number of pages	4
Journal	Solid State Communications
Volume	72
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(89)90436-5
Publication status	Published - 1989
Externally published	Yes

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@article{bf21eae3e6db4e07aa5c16950f8fe40e,

title = "Resonance scattering of photoexcited electrons in n-GaP",

abstract = "The resonant state of the shallow donor has been observed in the infrared photoconductivity spectra of n-GaP. The minimum in photoconductivity per absorbed photon near the resonant state energy is interpreted as being due to the resonance scattering of nonequilibrium photoexcited carriers.",

author = "Khanh, \{Dang Ngoc\} and E. Goldys and M. Grynberg",

year = "1989",

doi = "10.1016/0038-1098(89)90436-5",

language = "English",

volume = "72",

pages = "959--962",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier",

number = "9",

}

TY - JOUR

T1 - Resonance scattering of photoexcited electrons in n-GaP

AU - Khanh, Dang Ngoc

AU - Goldys, E.

AU - Grynberg, M.

PY - 1989

Y1 - 1989

N2 - The resonant state of the shallow donor has been observed in the infrared photoconductivity spectra of n-GaP. The minimum in photoconductivity per absorbed photon near the resonant state energy is interpreted as being due to the resonance scattering of nonequilibrium photoexcited carriers.

AB - The resonant state of the shallow donor has been observed in the infrared photoconductivity spectra of n-GaP. The minimum in photoconductivity per absorbed photon near the resonant state energy is interpreted as being due to the resonance scattering of nonequilibrium photoexcited carriers.

UR - https://www.scopus.com/pages/publications/0024916811

U2 - 10.1016/0038-1098(89)90436-5

DO - 10.1016/0038-1098(89)90436-5

M3 - Article

AN - SCOPUS:0024916811

SN - 0038-1098

VL - 72

SP - 959

EP - 962

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Resonance scattering of photoexcited electrons in n-GaP

Abstract

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