Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell

Steven Limpert; Kunal Ghosh; Hannes Wagner; Stuart Bowden; Christiana Honsberg; Stephen Goodnick; Stephen Bremner; Anita Ho-Baillie; Martin Green

doi:10.1109/PVSC.2014.6925045

Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell

Steven Limpert, Kunal Ghosh, Hannes Wagner, Stuart Bowden, Christiana Honsberg, Stephen Goodnick, Stephen Bremner, Anita Ho-Baillie, Martin Green

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

19 Citations (Scopus)

Abstract

We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO₂ /Al₂O₃ rear oxide passivation stack.

Original language	English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	836-840
Number of pages	5
ISBN (Electronic)	9781479943982, 9781479943999
DOIs	https://doi.org/10.1109/PVSC.2014.6925045
Publication status	Published - 2014
Externally published	Yes
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Publication series

Name
ISSN (Print)	0160-8371

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

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10.1109/PVSC.2014.6925045

Cite this

Limpert, S., Ghosh, K., Wagner, H., Bowden, S., Honsberg, C., Goodnick, S., Bremner, S., Ho-Baillie, A., & Green, M. (2014). Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. In 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) (pp. 836-840). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PVSC.2014.6925045

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title = "Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell",

abstract = " We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO2 /Al2O3 rear oxide passivation stack. ",

author = "Steven Limpert and Kunal Ghosh and Hannes Wagner and Stuart Bowden and Christiana Honsberg and Stephen Goodnick and Stephen Bremner and Anita Ho-Baillie and Martin Green",

year = "2014",

doi = "10.1109/PVSC.2014.6925045",

language = "English",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "836--840",

booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)",

address = "United States",

note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

}

Limpert, S, Ghosh, K, Wagner, H, Bowden, S, Honsberg, C, Goodnick, S, Bremner, S, Ho-Baillie, A & Green, M 2014, Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. in 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 836-840, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14. https://doi.org/10.1109/PVSC.2014.6925045

Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. / Limpert, Steven; Ghosh, Kunal; Wagner, Hannes et al.
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 836-840.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Limpert, Steven

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AU - Honsberg, Christiana

AU - Goodnick, Stephen

AU - Bremner, Stephen

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AB - We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO2 /Al2O3 rear oxide passivation stack.

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Limpert S, Ghosh K, Wagner H, Bowden S, Honsberg C, Goodnick S et al. Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. In 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2014. p. 836-840 doi: 10.1109/PVSC.2014.6925045

Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell

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