Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell

Steven Limpert, Kunal Ghosh, Hannes Wagner, Stuart Bowden, Christiana Honsberg, Stephen Goodnick, Stephen Bremner, Anita Ho-Baillie, Martin Green

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

14 Citations (Scopus)

Abstract

We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO2 /Al2O3 rear oxide passivation stack.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages836-840
Number of pages5
ISBN (Electronic)9781479943982, 9781479943999
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014

Publication series

Name
ISSN (Print)0160-8371

Conference

Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period8/06/1413/06/14

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