RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model

Pragya Kushwaha, Sourabh Khandelwal, Juan Pablo Duarte, Chenming Hu, Yogesh Singh Chauhan

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential based model for fully depleted silicon-on-insulator (FDSOI) transistors. The impact of gate, substrate, and thermal networks is demonstrated with S-parameter data, which enable the BSIM-IMG model to capture RF behavior of the FDSOI transistor. The model is validated over a wide range of biases and frequencies and excellent agreement with the experimental data is obtained.

Original languageEnglish
Article number7462299
Pages (from-to)1745-1751
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume64
Issue number6
DOIs
Publication statusPublished - 1 Jun 2016
Externally publishedYes

Keywords

  • BSIM-IMG
  • compact model
  • fully depleted silicon-on-insulator (FDSOI)
  • MOSFET
  • parameter extraction
  • RF

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