In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential based model for fully depleted silicon-on-insulator (FDSOI) transistors. The impact of gate, substrate, and thermal networks is demonstrated with S-parameter data, which enable the BSIM-IMG model to capture RF behavior of the FDSOI transistor. The model is validated over a wide range of biases and frequencies and excellent agreement with the experimental data is obtained.
|Number of pages||7|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|Publication status||Published - 1 Jun 2016|
- compact model
- fully depleted silicon-on-insulator (FDSOI)
- parameter extraction