RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model

Pragya Kushwaha; Sourabh Khandelwal; Juan Pablo Duarte; Chenming Hu; Yogesh Singh Chauhan

doi:10.1109/TMTT.2016.2557327

RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model

Pragya Kushwaha, Sourabh Khandelwal, Juan Pablo Duarte, Chenming Hu, Yogesh Singh Chauhan

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential based model for fully depleted silicon-on-insulator (FDSOI) transistors. The impact of gate, substrate, and thermal networks is demonstrated with S-parameter data, which enable the BSIM-IMG model to capture RF behavior of the FDSOI transistor. The model is validated over a wide range of biases and frequencies and excellent agreement with the experimental data is obtained.

Original language	English
Article number	7462299
Pages (from-to)	1745-1751
Number of pages	7
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	64
Issue number	6
DOIs	https://doi.org/10.1109/TMTT.2016.2557327
Publication status	Published - 1 Jun 2016
Externally published	Yes

Keywords

BSIM-IMG
compact model
fully depleted silicon-on-insulator (FDSOI)
MOSFET
parameter extraction
RF

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10.1109/TMTT.2016.2557327

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title = "RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model",

abstract = "In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential based model for fully depleted silicon-on-insulator (FDSOI) transistors. The impact of gate, substrate, and thermal networks is demonstrated with S-parameter data, which enable the BSIM-IMG model to capture RF behavior of the FDSOI transistor. The model is validated over a wide range of biases and frequencies and excellent agreement with the experimental data is obtained.",

keywords = "BSIM-IMG, compact model, fully depleted silicon-on-insulator (FDSOI), MOSFET, parameter extraction, RF",

author = "Pragya Kushwaha and Sourabh Khandelwal and Duarte, \{Juan Pablo\} and Chenming Hu and Chauhan, \{Yogesh Singh\}",

year = "2016",

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doi = "10.1109/TMTT.2016.2557327",

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AU - Khandelwal, Sourabh

AU - Duarte, Juan Pablo

AU - Hu, Chenming

AU - Chauhan, Yogesh Singh

PY - 2016/6/1

Y1 - 2016/6/1

N2 - In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential based model for fully depleted silicon-on-insulator (FDSOI) transistors. The impact of gate, substrate, and thermal networks is demonstrated with S-parameter data, which enable the BSIM-IMG model to capture RF behavior of the FDSOI transistor. The model is validated over a wide range of biases and frequencies and excellent agreement with the experimental data is obtained.

AB - In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential based model for fully depleted silicon-on-insulator (FDSOI) transistors. The impact of gate, substrate, and thermal networks is demonstrated with S-parameter data, which enable the BSIM-IMG model to capture RF behavior of the FDSOI transistor. The model is validated over a wide range of biases and frequencies and excellent agreement with the experimental data is obtained.

KW - BSIM-IMG

KW - compact model

KW - fully depleted silicon-on-insulator (FDSOI)

KW - MOSFET

KW - parameter extraction

KW - RF

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JF - IEEE Transactions on Microwave Theory and Techniques

IS - 6

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ER -

RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model

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