RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon

Qi Cheng, Peng Cui, Sourabh Khandelwal, Yuping Zeng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This paper demonstrates the design strategy in the self-aligned quantum-well InAs MOSFETs with T-shape S/D. A 2-D TCAD simulation is performed based on the experimental data. The effect of air gap between the T-shape metal contacts is taken into account. It is found that the fringing effects induced by the air gap has significant impacts on both DC and RF performances. Further study is carried out based on this TCAD simulation platform. The channel extension region, which is simply considered as part of series resistances, needs to be properly designed to maximize fT and fMAX. RF performances can't be further improved even if the gate length is aggressively scaled down. However, the reduction of contact resistance can improve fT and fMAX without any limitations. This contact resistance reduction can be realized by incorporating the additional annealing process in the self-aligned gate-last T-S/D process.

Original languageEnglish
Article number107885
Pages (from-to)1-8
Number of pages8
JournalSolid-State Electronics
Volume172
DOIs
Publication statusPublished - Oct 2020
Externally publishedYes

Keywords

  • InAs self-aligned MOSFET
  • Nano-scaled transistor AC simulation
  • RF parameters
  • Parasitic elements

Fingerprint

Dive into the research topics of 'RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon'. Together they form a unique fingerprint.

Cite this