RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon

Qi Cheng; Peng Cui; Sourabh Khandelwal; Yuping Zeng

doi:10.1016/j.sse.2020.107885

RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon

Qi Cheng, Peng Cui, Sourabh Khandelwal, Yuping Zeng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

This paper demonstrates the design strategy in the self-aligned quantum-well InAs MOSFETs with T-shape S/D. A 2-D TCAD simulation is performed based on the experimental data. The effect of air gap between the T-shape metal contacts is taken into account. It is found that the fringing effects induced by the air gap has significant impacts on both DC and RF performances. Further study is carried out based on this TCAD simulation platform. The channel extension region, which is simply considered as part of series resistances, needs to be properly designed to maximize f_T and f_MAX. RF performances can't be further improved even if the gate length is aggressively scaled down. However, the reduction of contact resistance can improve f_T and f_MAX without any limitations. This contact resistance reduction can be realized by incorporating the additional annealing process in the self-aligned gate-last T-S/D process.

Original language	English
Article number	107885
Pages (from-to)	1-8
Number of pages	8
Journal	Solid-State Electronics
Volume	172
DOIs	https://doi.org/10.1016/j.sse.2020.107885
Publication status	Published - Oct 2020
Externally published	Yes

Keywords

InAs self-aligned MOSFET
Nano-scaled transistor AC simulation
RF parameters
Parasitic elements

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10.1016/j.sse.2020.107885

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title = "RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon",

abstract = "This paper demonstrates the design strategy in the self-aligned quantum-well InAs MOSFETs with T-shape S/D. A 2-D TCAD simulation is performed based on the experimental data. The effect of air gap between the T-shape metal contacts is taken into account. It is found that the fringing effects induced by the air gap has significant impacts on both DC and RF performances. Further study is carried out based on this TCAD simulation platform. The channel extension region, which is simply considered as part of series resistances, needs to be properly designed to maximize fT and fMAX. RF performances can't be further improved even if the gate length is aggressively scaled down. However, the reduction of contact resistance can improve fT and fMAX without any limitations. This contact resistance reduction can be realized by incorporating the additional annealing process in the self-aligned gate-last T-S/D process.",

keywords = "InAs self-aligned MOSFET, Nano-scaled transistor AC simulation, RF parameters, Parasitic elements",

author = "Qi Cheng and Peng Cui and Sourabh Khandelwal and Yuping Zeng",

year = "2020",

month = oct,

doi = "10.1016/j.sse.2020.107885",

language = "English",

volume = "172",

pages = "1--8",

journal = "Solid State Electronics",

issn = "0038-1101",

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T1 - RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon

AU - Cheng, Qi

AU - Cui, Peng

AU - Khandelwal, Sourabh

AU - Zeng, Yuping

PY - 2020/10

Y1 - 2020/10

N2 - This paper demonstrates the design strategy in the self-aligned quantum-well InAs MOSFETs with T-shape S/D. A 2-D TCAD simulation is performed based on the experimental data. The effect of air gap between the T-shape metal contacts is taken into account. It is found that the fringing effects induced by the air gap has significant impacts on both DC and RF performances. Further study is carried out based on this TCAD simulation platform. The channel extension region, which is simply considered as part of series resistances, needs to be properly designed to maximize fT and fMAX. RF performances can't be further improved even if the gate length is aggressively scaled down. However, the reduction of contact resistance can improve fT and fMAX without any limitations. This contact resistance reduction can be realized by incorporating the additional annealing process in the self-aligned gate-last T-S/D process.

AB - This paper demonstrates the design strategy in the self-aligned quantum-well InAs MOSFETs with T-shape S/D. A 2-D TCAD simulation is performed based on the experimental data. The effect of air gap between the T-shape metal contacts is taken into account. It is found that the fringing effects induced by the air gap has significant impacts on both DC and RF performances. Further study is carried out based on this TCAD simulation platform. The channel extension region, which is simply considered as part of series resistances, needs to be properly designed to maximize fT and fMAX. RF performances can't be further improved even if the gate length is aggressively scaled down. However, the reduction of contact resistance can improve fT and fMAX without any limitations. This contact resistance reduction can be realized by incorporating the additional annealing process in the self-aligned gate-last T-S/D process.

KW - InAs self-aligned MOSFET

KW - Nano-scaled transistor AC simulation

KW - RF parameters

KW - Parasitic elements

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JO - Solid State Electronics

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RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon

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Keywords

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