Robust circuit model for GaN-based radiation-hard electronics

Dhawal Mahajan; Sayed Ali Albahrani; Jason Hodges; Sourabh Khandelwal

doi:10.1109/NSSMIC.2018.8824520

Robust circuit model for GaN-based radiation-hard electronics

Dhawal Mahajan, Sayed Ali Albahrani, Jason Hodges, Sourabh Khandelwal

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

GaN-based transistors are a promising candidate for extreme environment conditions such as nuclear plants. In this paper, we present a recently selected industry standard Advance SPICE Model for GaN HEMTs (ASM-GaN), which can be used for simulating circuits which are designed for extreme environment conditions, where the device is exposed to different types of radiation, such as electron and proton radiations. GaN transistors exposed to different proton radiation dose levels exhibit different levels of degradation. The results presented in this paper demonstrate that the ASM-GaN model excellently captures variation in the electrical performance of the device under test for different radiation dose levels. The degradation in the large signal RF performance of power amplifier (PA) is predicted under different radiation dose levels.

Original language	English
Title of host publication	2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
Subtitle of host publication	conference proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538684948
ISBN (Print)	9781538684955
DOIs	https://doi.org/10.1109/NSSMIC.2018.8824520
Publication status	Published - 2018
Event	2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018 - Sydney, Australia Duration: 10 Nov 2018 → 17 Nov 2018

Publication series

Name
ISSN (Print)	1082-3654
ISSN (Electronic)	2577-0829

Conference

Conference	2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018
Country/Territory	Australia
City	Sydney
Period	10/11/18 → 17/11/18

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10.1109/NSSMIC.2018.8824520

Cite this

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title = "Robust circuit model for GaN-based radiation-hard electronics",

abstract = "GaN-based transistors are a promising candidate for extreme environment conditions such as nuclear plants. In this paper, we present a recently selected industry standard Advance SPICE Model for GaN HEMTs (ASM-GaN), which can be used for simulating circuits which are designed for extreme environment conditions, where the device is exposed to different types of radiation, such as electron and proton radiations. GaN transistors exposed to different proton radiation dose levels exhibit different levels of degradation. The results presented in this paper demonstrate that the ASM-GaN model excellently captures variation in the electrical performance of the device under test for different radiation dose levels. The degradation in the large signal RF performance of power amplifier (PA) is predicted under different radiation dose levels.",

author = "Dhawal Mahajan and Albahrani, {Sayed Ali} and Jason Hodges and Sourabh Khandelwal",

year = "2018",

doi = "10.1109/NSSMIC.2018.8824520",

language = "English",

isbn = "9781538684955",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "1--2",

booktitle = "2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)",

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note = "2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018 ; Conference date: 10-11-2018 Through 17-11-2018",

}

Mahajan, D, Albahrani, SA, Hodges, J & Khandelwal, S 2018, Robust circuit model for GaN-based radiation-hard electronics. in 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC): conference proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-2, 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018, Sydney, Australia, 10/11/18. https://doi.org/10.1109/NSSMIC.2018.8824520

Robust circuit model for GaN-based radiation-hard electronics. / Mahajan, Dhawal; Albahrani, Sayed Ali; Hodges, Jason et al.
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC): conference proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

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AU - Albahrani, Sayed Ali

AU - Hodges, Jason

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N2 - GaN-based transistors are a promising candidate for extreme environment conditions such as nuclear plants. In this paper, we present a recently selected industry standard Advance SPICE Model for GaN HEMTs (ASM-GaN), which can be used for simulating circuits which are designed for extreme environment conditions, where the device is exposed to different types of radiation, such as electron and proton radiations. GaN transistors exposed to different proton radiation dose levels exhibit different levels of degradation. The results presented in this paper demonstrate that the ASM-GaN model excellently captures variation in the electrical performance of the device under test for different radiation dose levels. The degradation in the large signal RF performance of power amplifier (PA) is predicted under different radiation dose levels.

AB - GaN-based transistors are a promising candidate for extreme environment conditions such as nuclear plants. In this paper, we present a recently selected industry standard Advance SPICE Model for GaN HEMTs (ASM-GaN), which can be used for simulating circuits which are designed for extreme environment conditions, where the device is exposed to different types of radiation, such as electron and proton radiations. GaN transistors exposed to different proton radiation dose levels exhibit different levels of degradation. The results presented in this paper demonstrate that the ASM-GaN model excellently captures variation in the electrical performance of the device under test for different radiation dose levels. The degradation in the large signal RF performance of power amplifier (PA) is predicted under different radiation dose levels.

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BT - 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

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Robust circuit model for GaN-based radiation-hard electronics

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