Robust circuit model for GaN-based radiation-hard electronics

Dhawal Mahajan, Sayed Ali Albahrani, Jason Hodges, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

GaN-based transistors are a promising candidate for extreme environment conditions such as nuclear plants. In this paper, we present a recently selected industry standard Advance SPICE Model for GaN HEMTs (ASM-GaN), which can be used for simulating circuits which are designed for extreme environment conditions, where the device is exposed to different types of radiation, such as electron and proton radiations. GaN transistors exposed to different proton radiation dose levels exhibit different levels of degradation. The results presented in this paper demonstrate that the ASM-GaN model excellently captures variation in the electrical performance of the device under test for different radiation dose levels. The degradation in the large signal RF performance of power amplifier (PA) is predicted under different radiation dose levels.

Original languageEnglish
Title of host publication2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
Subtitle of host publicationconference proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-2
Number of pages2
ISBN (Electronic)9781538684948
ISBN (Print)9781538684955
DOIs
Publication statusPublished - 2018
Event2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018 - Sydney, Australia
Duration: 10 Nov 201817 Nov 2018

Publication series

Name
ISSN (Print)1082-3654
ISSN (Electronic)2577-0829

Conference

Conference2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018
CountryAustralia
CitySydney
Period10/11/1817/11/18

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