Abstract
A small-signal transistor model extraction technique is proposed. It partitions access and intrinsic elements with a more accurate network for the intrinsic section. This resolves problems of nonphysical parameters and inconsistencies across bias. The technique uses low gate and zero drain bias measurements to directly determine an access network. There is no need to apply electrical stress to the device during measurement. The procedure is deterministic.
Original language | English |
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Title of host publication | 2007 IEEE MTT-S International Microwave Symposium Digest |
Editors | Rob Hamilton |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 783-786 |
Number of pages | 4 |
ISBN (Print) | 1424406889, 9781424406883 |
DOIs | |
Publication status | Published - 2007 |
Event | 2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States Duration: 3 Jun 2007 → 8 Jun 2007 |
Other
Other | 2007 IEEE MTT-S International Microwave Symposium, IMS 2007 |
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Country | United States |
City | Honolulu, HI |
Period | 3/06/07 → 8/06/07 |