Robust extraction of access elements for broadband small-signal FET models

Anthony E. Parker*, Simon J. Mahon

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

16 Citations (Scopus)
59 Downloads (Pure)


A small-signal transistor model extraction technique is proposed. It partitions access and intrinsic elements with a more accurate network for the intrinsic section. This resolves problems of nonphysical parameters and inconsistencies across bias. The technique uses low gate and zero drain bias measurements to directly determine an access network. There is no need to apply electrical stress to the device during measurement. The procedure is deterministic.

Original languageEnglish
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
EditorsRob Hamilton
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Print)1424406889, 9781424406883
Publication statusPublished - 2007
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: 3 Jun 20078 Jun 2007


Other2007 IEEE MTT-S International Microwave Symposium, IMS 2007
CountryUnited States
CityHonolulu, HI

Bibliographical note

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