Role of localisation effects in GaN and InGaN

M. Godlewski, E. M. Goldys

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Abstract

Strong localisation effects are observed in epilayers of GaN and InGaN. We relate them to microstructure characteristics of samples studied. The same mechanism of localisation is shown to be the dominant in GaN and in InGaN. Influence of strong localisation effects on light emission properties is discussed.

Original languageEnglish
Pages (from-to)99-108
Number of pages10
JournalProceedings of SPIE-The International Society for Optical Engineering
Volume4318
DOIs
Publication statusPublished - 2001

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Keywords

  • Cathodoluminescence
  • Excitons
  • GaN
  • InGaN
  • Localisation
  • Microstructure
  • Photoluminescence
  • Quantum well

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