Role of localisation effects in GaN and InGaN

M. Godlewski; E. M. Goldys

doi:10.1117/12.417584

Role of localisation effects in GaN and InGaN

M. Godlewski, E. M. Goldys

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Strong localisation effects are observed in epilayers of GaN and InGaN. We relate them to microstructure characteristics of samples studied. The same mechanism of localisation is shown to be the dominant in GaN and in InGaN. Influence of strong localisation effects on light emission properties is discussed.

Original language	English
Pages (from-to)	99-108
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4318
DOIs	https://doi.org/10.1117/12.417584
Publication status	Published - 2001

Keywords

Cathodoluminescence
Excitons
GaN
InGaN
Localisation
Microstructure
Photoluminescence
Quantum well

Access to Document

10.1117/12.417584

Cite this

@article{fd64300e41c4439ab43389e2546110fb,

title = "Role of localisation effects in GaN and InGaN",

abstract = "Strong localisation effects are observed in epilayers of GaN and InGaN. We relate them to microstructure characteristics of samples studied. The same mechanism of localisation is shown to be the dominant in GaN and in InGaN. Influence of strong localisation effects on light emission properties is discussed.",

keywords = "Cathodoluminescence, Excitons, GaN, InGaN, Localisation, Microstructure, Photoluminescence, Quantum well",

author = "M. Godlewski and Goldys, {E. M.}",

year = "2001",

doi = "10.1117/12.417584",

language = "English",

volume = "4318",

pages = "99--108",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Role of localisation effects in GaN and InGaN

AU - Godlewski, M.

AU - Goldys, E. M.

PY - 2001

Y1 - 2001

N2 - Strong localisation effects are observed in epilayers of GaN and InGaN. We relate them to microstructure characteristics of samples studied. The same mechanism of localisation is shown to be the dominant in GaN and in InGaN. Influence of strong localisation effects on light emission properties is discussed.

AB - Strong localisation effects are observed in epilayers of GaN and InGaN. We relate them to microstructure characteristics of samples studied. The same mechanism of localisation is shown to be the dominant in GaN and in InGaN. Influence of strong localisation effects on light emission properties is discussed.

KW - Cathodoluminescence

KW - Excitons

KW - GaN

KW - InGaN

KW - Localisation

KW - Microstructure

KW - Photoluminescence

KW - Quantum well

UR - http://www.scopus.com/inward/record.url?scp=0034934271&partnerID=8YFLogxK

U2 - 10.1117/12.417584

DO - 10.1117/12.417584

M3 - Article

AN - SCOPUS:0034934271

VL - 4318

SP - 99

EP - 108

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -

Role of localisation effects in GaN and InGaN

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this