Strong localisation effects are observed in epilayers of GaN and InGaN. We relate them to microstructure characteristics of samples studied. The same mechanism of localisation is shown to be the dominant in GaN and in InGaN. Influence of strong localisation effects on light emission properties is discussed.
|Number of pages||10|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|Publication status||Published - 2001|
- Quantum well