Role of localisation effects in GaN and InGaN

M. Godlewski, E. M. Goldys

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)


    Strong localisation effects are observed in epilayers of GaN and InGaN. We relate them to microstructure characteristics of samples studied. The same mechanism of localisation is shown to be the dominant in GaN and in InGaN. Influence of strong localisation effects on light emission properties is discussed.

    Original languageEnglish
    Pages (from-to)99-108
    Number of pages10
    JournalProceedings of SPIE - The International Society for Optical Engineering
    Publication statusPublished - 2001


    • Cathodoluminescence
    • Excitons
    • GaN
    • InGaN
    • Localisation
    • Microstructure
    • Photoluminescence
    • Quantum well


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