Room temperature GaAsSb single nanowire infrared photodetectors

Ziyuan Li, Xiaoming Yuan, Lan Fu, Kun Peng, Fan Wang, Xiao Fu, Philippe Caroff, Thomas P. White, Hark Hoe Tan, Chennupati Jagadish

Research output: Contribution to journalArticlepeer-review

80 Citations (Scopus)


Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs0.56Sb0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs0.56Sb0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ∼12 cm2 V-1 s-1). Under light illumination, single GaAs0.56Sb0.44 NW photodetectors exhibited typical photoconductor behavior with an increased photocurrent observed with the increase of temperature owing to thermal activation of carrier trap states. A broadband infrared photoresponse with a long wavelength cutoff at ∼1.66 μm was obtained at room temperature. At a low operating bias voltage of 0.15 V a responsivity of 2.37 (1.44) A/W with corresponding detectivity of 1.08×109 (6.55×108) were achieved at the wavelength of 1.3 (1.55) μm, indicating that ternary GaAs0.56Sb0.44 NWs are promising photodetector candidates for small footprint integrated optical telecommunication systems.

Original languageEnglish
Article number445202
Pages (from-to)1-7
Number of pages7
Issue number44
Publication statusPublished - 6 Nov 2015


  • GaAsSb
  • semiconductor
  • nanowire
  • infrared photodetector
  • field-effect transistor


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