Room-temperature InAs/InP quantum-dot photonic crystal microlasers using cavity confined slow light

F. Bordas, C. Seassal, E. Dupuy, P. Regreny, M. Gendry, M. J. Steel, A. Rahmani

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

We achieved room temperature laser operation, around 1.5 μm, with a single layer of InAs/InP quantum dots in a photonic crystal structure using confined slow light. The lasing threshold is a few hundred μW.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Quantum Electronics and Laser Sczence Conference and Photonic Applications Systems Technologies 2007 Technical Digest
Place of PublicationWashington, DC
PublisherOptical Society of America (OSA)
Pages1-2
Number of pages2
ISBN (Print)1557528349, 9781557528346
DOIs
Publication statusPublished - 2007
EventConference on Lasers and Electro-Optics, CLEO 2007 - Baltimore, MD, United States
Duration: 6 May 200711 May 2007

Other

OtherConference on Lasers and Electro-Optics, CLEO 2007
CountryUnited States
CityBaltimore, MD
Period6/05/0711/05/07

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    Bordas, F., Seassal, C., Dupuy, E., Regreny, P., Gendry, M., Steel, M. J., & Rahmani, A. (2007). Room-temperature InAs/InP quantum-dot photonic crystal microlasers using cavity confined slow light. In Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Sczence Conference and Photonic Applications Systems Technologies 2007 Technical Digest (pp. 1-2). Washington, DC: Optical Society of America (OSA). https://doi.org/10.1109/CLEO.2007.4452685