Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 μm using cavity-confined slow light

Frédéric Bordas*, Christian Seassal, Emmanuel Dupuy, Philipe Regreny, Michel Gendry, Pierre Viktorovich, M. J. Steel, Adel Rahmani

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We have designed, fabricated, and characterized an InP photonic crystal slab structure that supports a cavity-confined slow-light mode, i.e. a bandgap-confined valence band-edge mode. Three dimensional finite difference in time domain calculations predict that this type of structure can support electromagnetic modes with large quality factors and small mode volumes. Moreover these modes are robust with respect to fabrication imperfections. In this paper, we demonstrate room-temperature laser operation at 1,5 μm of a cavity-confined slow-light mode under pulsed excitation. The gain medium is a single layer of InAs/lnP quantum dots. An effective peak pump power threshold of 80 μW is reported.

Original languageEnglish
Pages (from-to)5439-5445
Number of pages7
JournalOptics Express
Volume17
Issue number7
DOIs
Publication statusPublished - 30 Mar 2009

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    Bordas, F., Seassal, C., Dupuy, E., Regreny, P., Gendry, M., Viktorovich, P., ... Rahmani, A. (2009). Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 μm using cavity-confined slow light. Optics Express, 17(7), 5439-5445. https://doi.org/10.1364/OE.17.005439