Row structure in metal-induced Si(111) surface reconstructions

Kui-juan Jin, Barry C. Sanders, Shao-hua Pan, Guo-zhen Yang

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    We demonstrate that quantum size effects play a crucial role in the row structure of metal-induced Si(111) reconstruction by identifying the ‘magic’ widths of the metal adsorbates with the minima of electron energy as a function of adsorbate width. Without any adjustable parameters, we obtain accurate agreement with all recent results for Si(111)-4 × 1-In and Si(111)-3 × 1-M (M = Li, Na, K, Rb, Ag) structures. This new and simple physical picture of electron energies in metal adsorbates provides a universal quantitative model for describing the row structures of metal-induced Si(111) surface reconstructions.
    Original languageEnglish
    Pages (from-to)166-170
    Number of pages5
    JournalSurface and Interface Analysis
    Volume32
    Issue number1
    DOIs
    Publication statusPublished - 2001

    Keywords

    • models of surface kinetics
    • quantum effects
    • surface relaxation and reconstruction
    • metalsemiconductor

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