Abstract
We demonstrate that quantum size effects play a crucial role in the row structure of metal-induced Si(111) reconstruction by identifying the ‘magic’ widths of the metal adsorbates with the minima of electron energy as a function of adsorbate width. Without any adjustable parameters, we obtain accurate agreement with all recent results for Si(111)-4 × 1-In and Si(111)-3 × 1-M (M = Li, Na, K, Rb, Ag) structures. This new and simple physical picture of electron energies in metal adsorbates provides a universal quantitative model for describing the row structures of metal-induced Si(111) surface reconstructions.
Original language | English |
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Pages (from-to) | 166-170 |
Number of pages | 5 |
Journal | Surface and Interface Analysis |
Volume | 32 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2001 |
Keywords
- models of surface kinetics
- quantum effects
- surface relaxation and reconstruction
- metalsemiconductor