Row structure in metal-induced Si(111) surface reconstructions

Kui-juan Jin; Barry C. Sanders; Shao-hua Pan; Guo-zhen Yang

doi:10.1002/sia.1029

Row structure in metal-induced Si(111) surface reconstructions

Kui-juan Jin, Barry C. Sanders, Shao-hua Pan, Guo-zhen Yang

Department of Physics and Astronomy

Research output: Contribution to journal › Article

Abstract

We demonstrate that quantum size effects play a crucial role in the row structure of metal-induced Si(111) reconstruction by identifying the ‘magic’ widths of the metal adsorbates with the minima of electron energy as a function of adsorbate width. Without any adjustable parameters, we obtain accurate agreement with all recent results for Si(111)-4 × 1-In and Si(111)-3 × 1-M (M = Li, Na, K, Rb, Ag) structures. This new and simple physical picture of electron energies in metal adsorbates provides a universal quantitative model for describing the row structures of metal-induced Si(111) surface reconstructions.

Original language	English
Pages (from-to)	166-170
Number of pages	5
Journal	Surface and Interface Analysis
Volume	32
Issue number	1
DOIs	https://doi.org/10.1002/sia.1029
Publication status	Published - 2001

Keywords

models of surface kinetics
quantum effects
surface relaxation and reconstruction
metalsemiconductor

Access to Document

10.1002/sia.1029

Fingerprint Dive into the research topics of 'Row structure in metal-induced Si(111) surface reconstructions'. Together they form a unique fingerprint.

Cite this

@article{c7636647bbb04f36b5c1160943b6fc5d,

title = "Row structure in metal-induced Si(111) surface reconstructions",

abstract = "We demonstrate that quantum size effects play a crucial role in the row structure of metal-induced Si(111) reconstruction by identifying the ‘magic’ widths of the metal adsorbates with the minima of electron energy as a function of adsorbate width. Without any adjustable parameters, we obtain accurate agreement with all recent results for Si(111)-4 × 1-In and Si(111)-3 × 1-M (M = Li, Na, K, Rb, Ag) structures. This new and simple physical picture of electron energies in metal adsorbates provides a universal quantitative model for describing the row structures of metal-induced Si(111) surface reconstructions.",

keywords = "models of surface kinetics, quantum effects, surface relaxation and reconstruction, metalsemiconductor",

author = "Kui-juan Jin and Sanders, {Barry C.} and Shao-hua Pan and Guo-zhen Yang",

year = "2001",

doi = "10.1002/sia.1029",

language = "English",

volume = "32",

pages = "166--170",

journal = "Surface and Interface Analysis",

issn = "0142-2421",

publisher = "John Wiley & Sons",

number = "1",

}

TY - JOUR

T1 - Row structure in metal-induced Si(111) surface reconstructions

AU - Jin, Kui-juan

AU - Sanders, Barry C.

AU - Pan, Shao-hua

AU - Yang, Guo-zhen

PY - 2001

Y1 - 2001

N2 - We demonstrate that quantum size effects play a crucial role in the row structure of metal-induced Si(111) reconstruction by identifying the ‘magic’ widths of the metal adsorbates with the minima of electron energy as a function of adsorbate width. Without any adjustable parameters, we obtain accurate agreement with all recent results for Si(111)-4 × 1-In and Si(111)-3 × 1-M (M = Li, Na, K, Rb, Ag) structures. This new and simple physical picture of electron energies in metal adsorbates provides a universal quantitative model for describing the row structures of metal-induced Si(111) surface reconstructions.

AB - We demonstrate that quantum size effects play a crucial role in the row structure of metal-induced Si(111) reconstruction by identifying the ‘magic’ widths of the metal adsorbates with the minima of electron energy as a function of adsorbate width. Without any adjustable parameters, we obtain accurate agreement with all recent results for Si(111)-4 × 1-In and Si(111)-3 × 1-M (M = Li, Na, K, Rb, Ag) structures. This new and simple physical picture of electron energies in metal adsorbates provides a universal quantitative model for describing the row structures of metal-induced Si(111) surface reconstructions.

KW - models of surface kinetics

KW - quantum effects

KW - surface relaxation and reconstruction

KW - metalsemiconductor

U2 - 10.1002/sia.1029

DO - 10.1002/sia.1029

M3 - Article

VL - 32

SP - 166

EP - 170

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 1

ER -