Abstract
A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device to give linear scalability. The model uses a distributed network of intrinsic unit cells composed of lumped elements. The topology of these networks is determined such that a scalable set of parameters is obtained. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted for a GaAs pHEMT and the correct topology derived such that simple scaling rules apply to the unit cell.
| Original language | English |
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| Title of host publication | European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 |
| Place of Publication | Piscataway, NJ |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 374-377 |
| Number of pages | 4 |
| ISBN (Print) | 9782874870231 |
| Publication status | Published - 2011 |
| Event | 14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 - Manchester, United Kingdom Duration: 10 Oct 2011 → 11 Oct 2011 |
Other
| Other | 14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 |
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| Country/Territory | United Kingdom |
| City | Manchester |
| Period | 10/10/11 → 11/10/11 |