Scalable HEMT distributed model for millimeter-wave applications

M. E. Hoque; A. E. Parker; M. Heimlich; S. J. Mahon

Scalable HEMT distributed model for millimeter-wave applications

M. E. Hoque^*, A. E. Parker, M. Heimlich, S. J. Mahon

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

1 Citation (Scopus)

Abstract

A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linearly with respect to unit width of the pHEMT metal structure without any offset error. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fingers and the gate width are derived to optimize the size of the device.

Original language	English
Title of host publication	Asia-Pacific Microwave Conference Proceedings, APMC 2011
Place of Publication	Barton, A.C.T
Publisher	Engineers Australia
Pages	351-354
Number of pages	4
ISBN (Print)	9780858259744
Publication status	Published - 2011
Event	Asia-Pacific Microwave Conference, APMC 2011 - Melbourne, VIC, Australia Duration: 5 Dec 2011 → 8 Dec 2011

Other

Other	Asia-Pacific Microwave Conference, APMC 2011
Country	Australia
City	Melbourne, VIC
Period	5/12/11 → 8/12/11

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title = "Scalable HEMT distributed model for millimeter-wave applications",

abstract = "A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linearly with respect to unit width of the pHEMT metal structure without any offset error. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fingers and the gate width are derived to optimize the size of the device.",

author = "Hoque, {M. E.} and Parker, {A. E.} and M. Heimlich and Mahon, {S. J.}",

year = "2011",

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AU - Heimlich, M.

AU - Mahon, S. J.

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Y1 - 2011

N2 - A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linearly with respect to unit width of the pHEMT metal structure without any offset error. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fingers and the gate width are derived to optimize the size of the device.

AB - A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linearly with respect to unit width of the pHEMT metal structure without any offset error. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fingers and the gate width are derived to optimize the size of the device.

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M3 - Conference proceeding contribution

SN - 9780858259744

SP - 351

EP - 354

BT - Asia-Pacific Microwave Conference Proceedings, APMC 2011

PB - Engineers Australia

CY - Barton, A.C.T

ER -