Scalable HEMT distributed model for millimeter-wave applications

M. E. Hoque*, A. E. Parker, M. Heimlich, S. J. Mahon

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linearly with respect to unit width of the pHEMT metal structure without any offset error. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fingers and the gate width are derived to optimize the size of the device.

Original languageEnglish
Title of host publicationAsia-Pacific Microwave Conference Proceedings, APMC 2011
Place of PublicationBarton, A.C.T
PublisherEngineers Australia
Pages351-354
Number of pages4
ISBN (Print)9780858259744
Publication statusPublished - 2011
EventAsia-Pacific Microwave Conference, APMC 2011 - Melbourne, VIC, Australia
Duration: 5 Dec 20118 Dec 2011

Other

OtherAsia-Pacific Microwave Conference, APMC 2011
CountryAustralia
CityMelbourne, VIC
Period5/12/118/12/11

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