Abstract
A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linearly with respect to unit width of the pHEMT metal structure without any offset error. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fingers and the gate width are derived to optimize the size of the device.
| Original language | English |
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| Title of host publication | Asia-Pacific Microwave Conference Proceedings, APMC 2011 |
| Place of Publication | Barton, A.C.T |
| Publisher | Engineers Australia |
| Pages | 351-354 |
| Number of pages | 4 |
| ISBN (Print) | 9780858259744 |
| Publication status | Published - 2011 |
| Event | Asia-Pacific Microwave Conference, APMC 2011 - Melbourne, VIC, Australia Duration: 5 Dec 2011 → 8 Dec 2011 |
Other
| Other | Asia-Pacific Microwave Conference, APMC 2011 |
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| Country/Territory | Australia |
| City | Melbourne, VIC |
| Period | 5/12/11 → 8/12/11 |