Schottky barrier height modification on high-purity LPE GaAs following a sulphur-based etch

K. S. A. Butcher*, D. Alexiev, V. W. L. Chin, T. L. Tansley, R. J. Egan, M. Keane

*Corresponding author for this work

    Research output: Contribution to journal › Article › peer-review

    4 Citations (Scopus)

    Fingerprint

    Dive into the research topics of 'Schottky barrier height modification on high-purity LPE GaAs following a sulphur-based etch'. Together they form a unique fingerprint.

    Engineering & Materials Science

    Chemistry

    Physics & Astronomy