Selective area epitaxial growth of InP nanowire array for solar cell applications

Q. Gao, L. Fu, F. Wang, Y. Guo, Z. Y. Li, K. Peng, Li Li, Z. Li, Y. Wenas, S. Mokkapati, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

Original languageEnglish
Title of host publicationCOMMAD 2014
Subtitle of host publicationConference on Optoelectronic and Microelectronic Materials and Devices
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages252-253
Number of pages2
ISBN (Electronic)9781479968688
ISBN (Print)9781479968671
DOIs
Publication statusPublished - 10 Feb 2014
Event2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia
Duration: 14 Dec 201417 Dec 2014

Other

Other2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
CountryAustralia
CityPerth
Period14/12/1417/12/14

Keywords

  • MOCVD
  • nanowire
  • selective area epitaxy
  • solar cell

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