Selective area epitaxial growth of InP nanowire array for solar cell applications

Q. Gao; L. Fu; F. Wang; Y. Guo; Z. Y. Li; K. Peng; Li Li; Z. Li; Y. Wenas; S. Mokkapati; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2014.7038704

Selective area epitaxial growth of InP nanowire array for solar cell applications

Q. Gao, L. Fu, F. Wang, Y. Guo, Z. Y. Li, K. Peng, Li Li, Z. Li, Y. Wenas, S. Mokkapati, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

Original language	English
Title of host publication	COMMAD 2014
Subtitle of host publication	Conference on Optoelectronic and Microelectronic Materials and Devices
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	252-253
Number of pages	2
ISBN (Electronic)	9781479968688
ISBN (Print)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038704
Publication status	Published - 10 Feb 2014
Event	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014

Other

Other	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14

Keywords

MOCVD
nanowire
selective area epitaxy
solar cell

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10.1109/COMMAD.2014.7038704

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Gao, Q., Fu, L., Wang, F., Guo, Y., Li, Z. Y., Peng, K., Li, L., Li, Z., Wenas, Y., Mokkapati, S., Tan, H. H., & Jagadish, C. (2014). Selective area epitaxial growth of InP nanowire array for solar cell applications. In COMMAD 2014: Conference on Optoelectronic and Microelectronic Materials and Devices (pp. 252-253). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2014.7038704

@inproceedings{0628e4016478445297160593041c3ff7,

title = "Selective area epitaxial growth of InP nanowire array for solar cell applications",

abstract = "InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.",

keywords = "MOCVD, nanowire, selective area epitaxy, solar cell",

author = "Q. Gao and L. Fu and F. Wang and Y. Guo and Li, {Z. Y.} and K. Peng and Li Li and Z. Li and Y. Wenas and S. Mokkapati and Tan, {H. H.} and C. Jagadish",

year = "2014",

month = feb,

day = "10",

doi = "10.1109/COMMAD.2014.7038704",

language = "English",

isbn = "9781479968671",

pages = "252--253",

booktitle = "COMMAD 2014",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",

}

Gao, Q, Fu, L, Wang, F, Guo, Y, Li, ZY, Peng, K, Li, L, Li, Z, Wenas, Y, Mokkapati, S, Tan, HH & Jagadish, C 2014, Selective area epitaxial growth of InP nanowire array for solar cell applications. in COMMAD 2014: Conference on Optoelectronic and Microelectronic Materials and Devices. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 252-253, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038704

Selective area epitaxial growth of InP nanowire array for solar cell applications. / Gao, Q.; Fu, L.; Wang, F. et al.
COMMAD 2014: Conference on Optoelectronic and Microelectronic Materials and Devices. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 252-253.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Selective area epitaxial growth of InP nanowire array for solar cell applications

AU - Gao, Q.

AU - Fu, L.

AU - Wang, F.

AU - Guo, Y.

AU - Li, Z. Y.

AU - Peng, K.

AU - Li, Li

AU - Li, Z.

AU - Wenas, Y.

AU - Mokkapati, S.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2014/2/10

Y1 - 2014/2/10

N2 - InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

AB - InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

KW - MOCVD

KW - nanowire

KW - selective area epitaxy

KW - solar cell

UR - http://www.scopus.com/inward/record.url?scp=84983201169&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2014.7038704

DO - 10.1109/COMMAD.2014.7038704

M3 - Conference proceeding contribution

AN - SCOPUS:84983201169

SN - 9781479968671

SP - 252

EP - 253

BT - COMMAD 2014

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Y2 - 14 December 2014 through 17 December 2014

ER -

Selective area epitaxial growth of InP nanowire array for solar cell applications

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