Selective-area epitaxy of pure wurtzite InP nanowires: High quantum efficiency and room-temperature lasing

Qian Gao; Dhruv Saxena; Fan Wang; Lan Fu; Sudha Mokkapati; Yanan Guo; Li Li; Jennifer Wong-Leung; Philippe Caroff; Hark Hoe Tan; Chennupati Jagadish

doi:10.1021/nl5021409

Selective-area epitaxy of pure wurtzite InP nanowires: High quantum efficiency and room-temperature lasing

Qian Gao^*, Dhruv Saxena, Fan Wang, Lan Fu, Sudha Mokkapati, Yanan Guo, Li Li, Jennifer Wong-Leung, Philippe Caroff, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

191 Citations (Scopus)

Abstract

We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.

Original language	English
Pages (from-to)	5206-5211
Number of pages	6
Journal	Nano Letters
Volume	14
Issue number	9
DOIs	https://doi.org/10.1021/nl5021409
Publication status	Published - 10 Sept 2014

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10.1021/nl5021409

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abstract = "We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.",

author = "Qian Gao and Dhruv Saxena and Fan Wang and Lan Fu and Sudha Mokkapati and Yanan Guo and Li Li and Jennifer Wong-Leung and Philippe Caroff and Tan, {Hark Hoe} and Chennupati Jagadish",

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T1 - Selective-area epitaxy of pure wurtzite InP nanowires

T2 - High quantum efficiency and room-temperature lasing

AU - Gao, Qian

AU - Saxena, Dhruv

AU - Wang, Fan

AU - Fu, Lan

AU - Mokkapati, Sudha

AU - Guo, Yanan

AU - Li, Li

AU - Wong-Leung, Jennifer

AU - Caroff, Philippe

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2014/9/10

Y1 - 2014/9/10

N2 - We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.

AB - We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.

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U2 - 10.1021/nl5021409

DO - 10.1021/nl5021409

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JO - Nano Letters

JF - Nano Letters

IS - 9

ER -

Selective-area epitaxy of pure wurtzite InP nanowires: High quantum efficiency and room-temperature lasing

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