Selective-area epitaxy of pure wurtzite InP nanowires: High quantum efficiency and room-temperature lasing

Qian Gao*, Dhruv Saxena, Fan Wang, Lan Fu, Sudha Mokkapati, Yanan Guo, Li Li, Jennifer Wong-Leung, Philippe Caroff, Hark Hoe Tan, Chennupati Jagadish

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

132 Citations (Scopus)

Abstract

We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.

Original languageEnglish
Pages (from-to)5206-5211
Number of pages6
JournalNano Letters
Volume14
Issue number9
DOIs
Publication statusPublished - 10 Sep 2014

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