Self-consistent compact modeling of first- and third quadrant I-V behavior in SiC MOSFETs

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

In this paper, we present a self-consistent accurate model for the current-voltage (I-V) behavior of SiC MOSFETs in the first- and the third quadrant (3Q) of I-V plane. The gate voltage (Vgs) dependence of 3Q operation of SiC MOSFETs is first analyzed with the help of TCAD. It is found that a change in Vg affects the 3Q I-V by affecting the barrier height and current flow paths for the body-diode. For larger Vgs the channel current is also significant in 3Q operation. These effects have been modeled consistently leading to development of physics-based self-consistent model valid in both quadrants of the I-V plane. The developed model shows good agreement to I-V measurements performed on a a commercial SiC MOSFET.

Original languageEnglish
Title of host publication2022 IEEE Latin American Electron Devices Conference (LAEDC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781665497671
ISBN (Print)9781665497688
DOIs
Publication statusPublished - 2022
Event2022 IEEE Latin America Electron Devices Conference, LAEDC 2022 - Cancun, Mexico
Duration: 4 Jul 20226 Jul 2022

Conference

Conference2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
Country/TerritoryMexico
CityCancun
Period4/07/226/07/22

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