Self-organized growth of II-VI wide bandgap quantum dot structures

Z. Zhu*, E. Kurtz, K. Arai, Y. F. Chen, D. M. Bagnall, P. Tomashini, F. Lu, T. Sekiguchi, T. Yao, T. Yasuda, Y. Segawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We present our recent investigations on the self-organized growth and optical properties of quantum structures including CdSe quantum dots (QDs) embedded in ZnSe, ZnSe QDs in ZnS, and ZnO quantum pyramids. The self-organized mechanism is shown to play an important role in the formation of CdSe QDs on ZnSe(111). The ZnSe QDs are found to form on a 1 ML thick ZnSe wetting layer embedded in ZnS(100). The self-organized ZnO quantum pyramids form on ZnO(0001) buffer layers through preferred facet nucleation rather than strain-induced islanding.

Original languageEnglish
Pages (from-to)827-833
Number of pages7
JournalPhysica Status Solidi B: Basic Solid State Physics
Volume202
Issue number2
DOIs
Publication statusPublished - Aug 1997
Externally publishedYes

Fingerprint

Dive into the research topics of 'Self-organized growth of II-VI wide bandgap quantum dot structures'. Together they form a unique fingerprint.

Cite this