Semiconductor line source for low-coherence interferometry

Andrei V. Zvyagin; Michael G. Garcia-Webb; David D. Sampson

doi:10.1364/AO.40.000913

Semiconductor line source for low-coherence interferometry

Andrei V. Zvyagin, Michael G. Garcia-Webb, David D. Sampson

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The suitability for low-coherence interferometry of a high-power, semiconductor laser line source operated at a forward bias current below threshold is demonstrated. Measurements of the important characteristics of the source are presented. For example, the source produces an output power of 1.3mW and a spatially uniform coherence length of 16 mmat a bias current of 86% of threshold (250 mA) at 20°C. The usefulness of the source is verified by measurement of the line profile of a contact lens.

Original language	English
Pages (from-to)	913-915
Number of pages	3
Journal	Applied Optics
Volume	40
Issue number	6
DOIs	https://doi.org/10.1364/AO.40.000913
Publication status	Published - 20 Feb 2001
Externally published	Yes

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10.1364/AO.40.000913

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@article{b095316c733845df9e64ad594d70647f,

title = "Semiconductor line source for low-coherence interferometry",

abstract = "The suitability for low-coherence interferometry of a high-power, semiconductor laser line source operated at a forward bias current below threshold is demonstrated. Measurements of the important characteristics of the source are presented. For example, the source produces an output power of 1.3mW and a spatially uniform coherence length of 16 mmat a bias current of 86% of threshold (250 mA) at 20°C. The usefulness of the source is verified by measurement of the line profile of a contact lens.",

author = "Zvyagin, {Andrei V.} and Garcia-Webb, {Michael G.} and Sampson, {David D.}",

year = "2001",

month = feb,

day = "20",

doi = "10.1364/AO.40.000913",

language = "English",

volume = "40",

pages = "913--915",

journal = "Applied Optics",

issn = "1559-128X",

publisher = "Optical Society of America (OSA)",

number = "6",

}

TY - JOUR

T1 - Semiconductor line source for low-coherence interferometry

AU - Zvyagin, Andrei V.

AU - Garcia-Webb, Michael G.

AU - Sampson, David D.

PY - 2001/2/20

Y1 - 2001/2/20

N2 - The suitability for low-coherence interferometry of a high-power, semiconductor laser line source operated at a forward bias current below threshold is demonstrated. Measurements of the important characteristics of the source are presented. For example, the source produces an output power of 1.3mW and a spatially uniform coherence length of 16 mmat a bias current of 86% of threshold (250 mA) at 20°C. The usefulness of the source is verified by measurement of the line profile of a contact lens.

AB - The suitability for low-coherence interferometry of a high-power, semiconductor laser line source operated at a forward bias current below threshold is demonstrated. Measurements of the important characteristics of the source are presented. For example, the source produces an output power of 1.3mW and a spatially uniform coherence length of 16 mmat a bias current of 86% of threshold (250 mA) at 20°C. The usefulness of the source is verified by measurement of the line profile of a contact lens.

UR - http://www.scopus.com/inward/record.url?scp=0038502521&partnerID=8YFLogxK

U2 - 10.1364/AO.40.000913

DO - 10.1364/AO.40.000913

M3 - Article

C2 - 18357072

AN - SCOPUS:0038502521

SN - 1559-128X

VL - 40

SP - 913

EP - 915

JO - Applied Optics

JF - Applied Optics

IS - 6

ER -

Semiconductor line source for low-coherence interferometry

Abstract

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