Semiconductor line source for low-coherence interferometry

Andrei V. Zvyagin, Michael G. Garcia-Webb, David D. Sampson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The suitability for low-coherence interferometry of a high-power, semiconductor laser line source operated at a forward bias current below threshold is demonstrated. Measurements of the important characteristics of the source are presented. For example, the source produces an output power of 1.3mW and a spatially uniform coherence length of 16 mmat a bias current of 86% of threshold (250 mA) at 20°C. The usefulness of the source is verified by measurement of the line profile of a contact lens.

Original languageEnglish
Pages (from-to)913-915
Number of pages3
JournalApplied Optics
Volume40
Issue number6
DOIs
Publication statusPublished - 20 Feb 2001
Externally publishedYes

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