Short-laser-pulse and steady-light induced degradation of intrinsic, p-type and compensated "a-Si:H"

P. Tzanetakis; N. Kopidakis; M. Androulidaki; C. Kalpouzos; P. Stradins; H. Fritzsche

doi:10.1016/0022-3093(95)00732-6

Short-laser-pulse and steady-light induced degradation of intrinsic, p-type and compensated "a-Si:H"

P. Tzanetakis, N. Kopidakis, M. Androulidaki, C. Kalpouzos, P. Stradins, H. Fritzsche^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Degradation of the same hydrogenated amorphous silicon (a:Si:H) samples with short laser pulses (30 ns) and steady bandgap light (CW) reveals that the kinetics is different for pulses and CW. For pulse degradation the kinetics depends on doping. Particularly in doped samples pulses degrade the photoconductivity, σ_p, much more than CW light for the same increase in light-induced defects, N_D. The lack of correlation between σ_p and N_D suggests that other metastable structural changes besides defects are induced by bandgap light.

Original language	English
Pages (from-to)	458-461
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	198-200
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(95)00732-6
Publication status	Published - May 1996
Externally published	Yes

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title = "Short-laser-pulse and steady-light induced degradation of intrinsic, p-type and compensated {"}a-Si:H{"}",

abstract = "Degradation of the same hydrogenated amorphous silicon (a:Si:H) samples with short laser pulses (30 ns) and steady bandgap light (CW) reveals that the kinetics is different for pulses and CW. For pulse degradation the kinetics depends on doping. Particularly in doped samples pulses degrade the photoconductivity, σp, much more than CW light for the same increase in light-induced defects, ND. The lack of correlation between σp and ND suggests that other metastable structural changes besides defects are induced by bandgap light.",

author = "P. Tzanetakis and N. Kopidakis and M. Androulidaki and C. Kalpouzos and P. Stradins and H. Fritzsche",

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doi = "10.1016/0022-3093(95)00732-6",

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T1 - Short-laser-pulse and steady-light induced degradation of intrinsic, p-type and compensated "a-Si:H"

AU - Tzanetakis, P.

AU - Kopidakis, N.

AU - Androulidaki, M.

AU - Kalpouzos, C.

AU - Stradins, P.

AU - Fritzsche, H.

PY - 1996/5

Y1 - 1996/5

N2 - Degradation of the same hydrogenated amorphous silicon (a:Si:H) samples with short laser pulses (30 ns) and steady bandgap light (CW) reveals that the kinetics is different for pulses and CW. For pulse degradation the kinetics depends on doping. Particularly in doped samples pulses degrade the photoconductivity, σp, much more than CW light for the same increase in light-induced defects, ND. The lack of correlation between σp and ND suggests that other metastable structural changes besides defects are induced by bandgap light.

AB - Degradation of the same hydrogenated amorphous silicon (a:Si:H) samples with short laser pulses (30 ns) and steady bandgap light (CW) reveals that the kinetics is different for pulses and CW. For pulse degradation the kinetics depends on doping. Particularly in doped samples pulses degrade the photoconductivity, σp, much more than CW light for the same increase in light-induced defects, ND. The lack of correlation between σp and ND suggests that other metastable structural changes besides defects are induced by bandgap light.

UR - http://www.scopus.com/inward/record.url?scp=4243273104&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(95)00732-6

DO - 10.1016/0022-3093(95)00732-6

M3 - Article

AN - SCOPUS:4243273104

SN - 0022-3093

VL - 198-200

SP - 458

EP - 461

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Short-laser-pulse and steady-light induced degradation of intrinsic, p-type and compensated "a-Si:H"

Abstract

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