Short-laser-pulse and steady-light induced degradation of intrinsic, p-type and compensated "a-Si:H"

P. Tzanetakis, N. Kopidakis, M. Androulidaki, C. Kalpouzos, P. Stradins, H. Fritzsche*

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Degradation of the same hydrogenated amorphous silicon (a:Si:H) samples with short laser pulses (30 ns) and steady bandgap light (CW) reveals that the kinetics is different for pulses and CW. For pulse degradation the kinetics depends on doping. Particularly in doped samples pulses degrade the photoconductivity, σp, much more than CW light for the same increase in light-induced defects, ND. The lack of correlation between σp and ND suggests that other metastable structural changes besides defects are induced by bandgap light.

Original languageEnglish
Pages (from-to)458-461
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume198-200
Issue numberPART 1
DOIs
Publication statusPublished - May 1996
Externally publishedYes

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