Significant improvement in the performance of PbSe quantum dot solar cell by introducing a CsPbBr3 perovskite colloidal nanocrystal back layer

Zhilong Zhang; Zihan Chen; Jianbing Zhang; Weijian Chen; Jianfeng Yang; Xiaoming Wen; Bo Wang; Naoya Kobamoto; Lin Yuan; John A. Stride; Gavin J. Conibeer; Robert J. Patterson; Shujuan Huang

doi:10.1002/aenm.201601773

Significant improvement in the performance of PbSe quantum dot solar cell by introducing a CsPbBr₃ perovskite colloidal nanocrystal back layer

Zhilong Zhang, Zihan Chen, Jianbing Zhang, Weijian Chen, Jianfeng Yang, Xiaoming Wen, Bo Wang, Naoya Kobamoto, Lin Yuan, John A. Stride, Gavin J. Conibeer, Robert J. Patterson, Shujuan Huang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article

36 Citations (Scopus)

Abstract

A PbSe quantum dot solar cell with an efficiency of 7.22% and a fill factor of 62.4% is achieved by applying a CsPbBr₃ perovskite quantum dot back layer. The back layer can effectively suppress carrier recombination at the PbSe/Au interfaces, hence lead to significant improvement in open‐circuit voltage and fill factor.

Original language	English
Article number	1601773
Number of pages	7
Journal	Advanced Energy Materials
Volume	7
Issue number	5
DOIs	https://doi.org/10.1002/aenm.201601773
Publication status	Published - 8 Mar 2017
Externally published	Yes

Access to Document

10.1002/aenm.201601773

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Significant improvement in the performance of PbSe quantum dot solar cell by introducing a CsPbBr<sub>3</sub> perovskite colloidal nanocrystal back layer'. Together they form a unique fingerprint.

Cite this

Zhang, Zhilong ; Chen, Zihan ; Zhang, Jianbing ; Chen, Weijian ; Yang, Jianfeng ; Wen, Xiaoming ; Wang, Bo ; Kobamoto, Naoya ; Yuan, Lin ; Stride, John A. ; Conibeer, Gavin J. ; Patterson, Robert J. ; Huang, Shujuan. / Significant improvement in the performance of PbSe quantum dot solar cell by introducing a CsPbBr₃ perovskite colloidal nanocrystal back layer. In: Advanced Energy Materials. 2017 ; Vol. 7, No. 5.

@article{a163b97098f9465185794ddd890c803a,

title = "Significant improvement in the performance of PbSe quantum dot solar cell by introducing a CsPbBr3 perovskite colloidal nanocrystal back layer",

abstract = "A PbSe quantum dot solar cell with an efficiency of 7.22{\%} and a fill factor of 62.4{\%} is achieved by applying a CsPbBr3 perovskite quantum dot back layer. The back layer can effectively suppress carrier recombination at the PbSe/Au interfaces, hence lead to significant improvement in open‐circuit voltage and fill factor.",

author = "Zhilong Zhang and Zihan Chen and Jianbing Zhang and Weijian Chen and Jianfeng Yang and Xiaoming Wen and Bo Wang and Naoya Kobamoto and Lin Yuan and Stride, {John A.} and Conibeer, {Gavin J.} and Patterson, {Robert J.} and Shujuan Huang",

year = "2017",

month = "3",

day = "8",

doi = "10.1002/aenm.201601773",

language = "English",

volume = "7",

journal = "Advanced Energy Materials",

issn = "1614-6832",

publisher = "Wiley-VCH, Wiley",

number = "5",

}

Zhang, Z, Chen, Z, Zhang, J, Chen, W, Yang, J, Wen, X, Wang, B, Kobamoto, N, Yuan, L, Stride, JA, Conibeer, GJ, Patterson, RJ & Huang, S 2017, 'Significant improvement in the performance of PbSe quantum dot solar cell by introducing a CsPbBr₃ perovskite colloidal nanocrystal back layer', Advanced Energy Materials, vol. 7, no. 5, 1601773. https://doi.org/10.1002/aenm.201601773

Significant improvement in the performance of PbSe quantum dot solar cell by introducing a CsPbBr₃ perovskite colloidal nanocrystal back layer. / Zhang, Zhilong; Chen, Zihan; Zhang, Jianbing; Chen, Weijian; Yang, Jianfeng; Wen, Xiaoming; Wang, Bo; Kobamoto, Naoya; Yuan, Lin; Stride, John A.; Conibeer, Gavin J.; Patterson, Robert J.; Huang, Shujuan.

In: Advanced Energy Materials, Vol. 7, No. 5, 1601773, 08.03.2017.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Significant improvement in the performance of PbSe quantum dot solar cell by introducing a CsPbBr3 perovskite colloidal nanocrystal back layer

AU - Zhang, Zhilong

AU - Chen, Zihan

AU - Zhang, Jianbing

AU - Chen, Weijian

AU - Yang, Jianfeng

AU - Wen, Xiaoming

AU - Wang, Bo

AU - Kobamoto, Naoya

AU - Yuan, Lin

AU - Stride, John A.

AU - Conibeer, Gavin J.

AU - Patterson, Robert J.

AU - Huang, Shujuan

PY - 2017/3/8

Y1 - 2017/3/8

N2 - A PbSe quantum dot solar cell with an efficiency of 7.22% and a fill factor of 62.4% is achieved by applying a CsPbBr3 perovskite quantum dot back layer. The back layer can effectively suppress carrier recombination at the PbSe/Au interfaces, hence lead to significant improvement in open‐circuit voltage and fill factor.

AB - A PbSe quantum dot solar cell with an efficiency of 7.22% and a fill factor of 62.4% is achieved by applying a CsPbBr3 perovskite quantum dot back layer. The back layer can effectively suppress carrier recombination at the PbSe/Au interfaces, hence lead to significant improvement in open‐circuit voltage and fill factor.

UR - http://www.scopus.com/inward/record.url?scp=85003680905&partnerID=8YFLogxK

U2 - 10.1002/aenm.201601773

DO - 10.1002/aenm.201601773

M3 - Article

VL - 7

JO - Advanced Energy Materials

JF - Advanced Energy Materials

SN - 1614-6832

IS - 5

M1 - 1601773

ER -