Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure

T. M.Ben Masaud*, E. Jaberansary, D. M. Bagnall, H. M.H. Chong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20μm have been achieved.

Original languageEnglish
Title of host publication8th IEEE International Conference on Group IV Photonics, GFP 2011
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages136-138
Number of pages3
ISBN (Electronic)9781424483402
ISBN (Print)9781424483389
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event8th IEEE International Conference on Group IV Photonics, GFP 2011 - London, United Kingdom
Duration: 14 Sep 201116 Sep 2011

Conference

Conference8th IEEE International Conference on Group IV Photonics, GFP 2011
CountryUnited Kingdom
CityLondon
Period14/09/1116/09/11

Keywords

  • electro-optics
  • heterojunction
  • plasma dispersion and Bragg reflectors
  • silicon photonics

Fingerprint Dive into the research topics of 'Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure'. Together they form a unique fingerprint.

Cite this