Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure

T. M.Ben Masaud; E. Jaberansary; D. M. Bagnall; H. M.H. Chong

doi:10.1109/GROUP4.2011.6053741

Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure

T. M.Ben Masaud^*, E. Jaberansary, D. M. Bagnall, H. M.H. Chong

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20μm have been achieved.

Original language	English
Title of host publication	8th IEEE International Conference on Group IV Photonics, GFP 2011
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	136-138
Number of pages	3
ISBN (Electronic)	9781424483402
ISBN (Print)	9781424483389
DOIs	https://doi.org/10.1109/GROUP4.2011.6053741
Publication status	Published - 2011
Externally published	Yes
Event	8th IEEE International Conference on Group IV Photonics, GFP 2011 - London, United Kingdom Duration: 14 Sept 2011 → 16 Sept 2011

Conference

Conference	8th IEEE International Conference on Group IV Photonics, GFP 2011
Country/Territory	United Kingdom
City	London
Period	14/09/11 → 16/09/11

Keywords

electro-optics
heterojunction
plasma dispersion and Bragg reflectors
silicon photonics

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10.1109/GROUP4.2011.6053741

Cite this

@inproceedings{320cd1922cd5402daef79f629a30e026,

title = "Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure",

abstract = "We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20μm have been achieved.",

keywords = "electro-optics, heterojunction, plasma dispersion and Bragg reflectors, silicon photonics",

author = "Masaud, {T. M.Ben} and E. Jaberansary and Bagnall, {D. M.} and Chong, {H. M.H.}",

year = "2011",

doi = "10.1109/GROUP4.2011.6053741",

language = "English",

isbn = "9781424483389",

pages = "136--138",

booktitle = "8th IEEE International Conference on Group IV Photonics, GFP 2011",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "8th IEEE International Conference on Group IV Photonics, GFP 2011 ; Conference date: 14-09-2011 Through 16-09-2011",

}

Masaud, TMB, Jaberansary, E, Bagnall, DM & Chong, HMH 2011, Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure. in 8th IEEE International Conference on Group IV Photonics, GFP 2011., 6053741, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, pp. 136-138, 8th IEEE International Conference on Group IV Photonics, GFP 2011, London, United Kingdom, 14/09/11. https://doi.org/10.1109/GROUP4.2011.6053741

Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure. / Masaud, T. M.Ben; Jaberansary, E.; Bagnall, D. M. et al.
8th IEEE International Conference on Group IV Photonics, GFP 2011. Piscataway: Institute of Electrical and Electronics Engineers (IEEE), 2011. p. 136-138 6053741.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure

AU - Masaud, T. M.Ben

AU - Jaberansary, E.

AU - Bagnall, D. M.

AU - Chong, H. M.H.

PY - 2011

Y1 - 2011

N2 - We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20μm have been achieved.

AB - We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20μm have been achieved.

KW - electro-optics

KW - heterojunction

KW - plasma dispersion and Bragg reflectors

KW - silicon photonics

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U2 - 10.1109/GROUP4.2011.6053741

DO - 10.1109/GROUP4.2011.6053741

M3 - Conference proceeding contribution

AN - SCOPUS:81355163390

SN - 9781424483389

SP - 136

EP - 138

BT - 8th IEEE International Conference on Group IV Photonics, GFP 2011

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway

T2 - 8th IEEE International Conference on Group IV Photonics, GFP 2011

Y2 - 14 September 2011 through 16 September 2011

ER -

Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure

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Keywords

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