Silicon-germanium: properties, growth and applications

Yaser M. Haddara*, Peter Ashburn, Darren M. Bagnall

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

13 Citations (Scopus)

Abstract

Silicon-germanium is an important material that is used for the fabrication of SiGe heterojunction bipolar transistors and strained Si metal-oxide-semiconductor (MOSmetal–oxide–semiconductor (MOS)) transistors for advanced complementary metal-oxide-semiconductor (CMOScomplementary metal-oxide-semiconductor (CMOS)) and BiCMOS (bipolar CMOS) technologies. It also has interesting optical properties that are increasingly being applied in silicon-based photonic devices. The key benefit of silicon-germanium is its use in combination with silicon to produce a heterojunction. Strain is incorporated into the silicon-germanium or the silicon during growth, which also gives improved physical properties such as higher values of mobility. This chapter reviews the properties of silicon-germanium, beginning with the electronic properties and then progressing to the optical properties. The growth of silicon-germanium is considered, with particular emphasis on the chemical vapour deposition technique and selective epitaxy. Finally, the properties of polycrystalline silicon-germanium are discussed in the context of its use as a gate material for MOS transistors.

Original languageEnglish
Title of host publicationSpringer handbook of electronic and photonic materials
EditorsSafa Kasap, Peter Capper
Place of PublicationCham
PublisherSpringer, Springer Nature
Chapter22
Pages523-541
Number of pages19
Edition2nd
ISBN (Electronic)9783319489339
ISBN (Print)9783319489315
DOIs
Publication statusPublished - 2017
Externally publishedYes

Publication series

NameSpringer Handbooks
ISSN (Print)2522-8692
ISSN (Electronic)2522-8706

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