Silicon quantum dot nanostructures for tandem photovoltaic cells

Gavin Conibeer*, Martin Green, Eun-Chel Cho, Dirk König, Young-Hyun Cho, Thipwan Fangsuwannarak, Giuseppe Scardera, Edwin Pink, Yidan Huang, Tom Puzzer, Shujuan Huang, Dengyuan Song, Chris Flynn, Sangwook Park, Xiaojing Hao, Daniel Mansfield

*Corresponding author for this work

Research output: Contribution to journalConference paperpeer-review

351 Citations (Scopus)


Tandem PV cells - with their increased efficiency due to a multi-band gap approach - usually involve expensive materials and fabrication. Thin film approaches, with an engineered variation in band gap through the use of quantum confinement in Si quantum dots, offer a cheaper alternative. Presented are characterisation and modelling data on fabrication of such Si and Sn QD nanostructures in various dielectric matrices by self-organised thin film deposition, with demonstrated confined energy levels of 1.7 eV for 2 nm diameter QDs. This being the optimum energy for an upper tandem cell element.

Original languageEnglish
Pages (from-to)6748-6756
Number of pages9
JournalThin Solid Films
Issue number20
Publication statusPublished - 30 Aug 2008
Externally publishedYes
EventAdvanced Materials and Concepts for Photovoltaics 2007 - Strasbourg, France
Duration: 1 Jun 20071 Jun 2007

Bibliographical note

Date of conference unknown.


  • Quantum dots
  • Thin film
  • Third generation
  • Quantum confinement

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