Tandem PV cells - with their increased efficiency due to a multi-band gap approach - usually involve expensive materials and fabrication. Thin film approaches, with an engineered variation in band gap through the use of quantum confinement in Si quantum dots, offer a cheaper alternative. Presented are characterisation and modelling data on fabrication of such Si and Sn QD nanostructures in various dielectric matrices by self-organised thin film deposition, with demonstrated confined energy levels of 1.7 eV for 2 nm diameter QDs. This being the optimum energy for an upper tandem cell element.
|Number of pages||9|
|Journal||Thin Solid Films|
|Publication status||Published - 30 Aug 2008|
|Event||Advanced Materials and Concepts for Photovoltaics 2007 - Strasbourg, France|
Duration: 1 Jun 2007 → 1 Jun 2007
Bibliographical noteDate of conference unknown.
- Quantum dots
- Thin film
- Third generation
- Quantum confinement