Silicon quantum dot nanostructures for tandem photovoltaic cells

Gavin Conibeer; Martin Green; Eun-Chel Cho; Dirk König; Young-Hyun Cho; Thipwan Fangsuwannarak; Giuseppe Scardera; Edwin Pink; Yidan Huang; Tom Puzzer; Shujuan Huang; Dengyuan Song; Chris Flynn; Sangwook Park; Xiaojing Hao; Daniel Mansfield

doi:10.1016/j.tsf.2007.12.096

Silicon quantum dot nanostructures for tandem photovoltaic cells

Gavin Conibeer^*, Martin Green, Eun-Chel Cho, Dirk König, Young-Hyun Cho, Thipwan Fangsuwannarak, Giuseppe Scardera, Edwin Pink, Yidan Huang, Tom Puzzer, Shujuan Huang, Dengyuan Song, Chris Flynn, Sangwook Park, Xiaojing Hao, Daniel Mansfield

^*Corresponding author for this work

Research output: Contribution to journal › Conference paper › peer-review

370 Citations (Scopus)

Abstract

Tandem PV cells - with their increased efficiency due to a multi-band gap approach - usually involve expensive materials and fabrication. Thin film approaches, with an engineered variation in band gap through the use of quantum confinement in Si quantum dots, offer a cheaper alternative. Presented are characterisation and modelling data on fabrication of such Si and Sn QD nanostructures in various dielectric matrices by self-organised thin film deposition, with demonstrated confined energy levels of 1.7 eV for 2 nm diameter QDs. This being the optimum energy for an upper tandem cell element.

Original language	English
Pages (from-to)	6748-6756
Number of pages	9
Journal	Thin Solid Films
Volume	516
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2007.12.096
Publication status	Published - 30 Aug 2008
Externally published	Yes
Event	Advanced Materials and Concepts for Photovoltaics 2007 - Strasbourg, France Duration: 1 Jun 2007 → 1 Jun 2007

Bibliographical note

Date of conference unknown.

Keywords

Quantum dots
Thin film
Third generation
Quantum confinement

Access to Document

10.1016/j.tsf.2007.12.096

Cite this

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title = "Silicon quantum dot nanostructures for tandem photovoltaic cells",

abstract = "Tandem PV cells - with their increased efficiency due to a multi-band gap approach - usually involve expensive materials and fabrication. Thin film approaches, with an engineered variation in band gap through the use of quantum confinement in Si quantum dots, offer a cheaper alternative. Presented are characterisation and modelling data on fabrication of such Si and Sn QD nanostructures in various dielectric matrices by self-organised thin film deposition, with demonstrated confined energy levels of 1.7 eV for 2 nm diameter QDs. This being the optimum energy for an upper tandem cell element.",

keywords = "Quantum dots, Thin film, Third generation, Quantum confinement",

author = "Gavin Conibeer and Martin Green and Eun-Chel Cho and Dirk K{\"o}nig and Young-Hyun Cho and Thipwan Fangsuwannarak and Giuseppe Scardera and Edwin Pink and Yidan Huang and Tom Puzzer and Shujuan Huang and Dengyuan Song and Chris Flynn and Sangwook Park and Xiaojing Hao and Daniel Mansfield",

note = "Date of conference unknown.; Advanced Materials and Concepts for Photovoltaics 2007 ; Conference date: 01-06-2007 Through 01-06-2007",

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doi = "10.1016/j.tsf.2007.12.096",

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volume = "516",

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T1 - Silicon quantum dot nanostructures for tandem photovoltaic cells

AU - Conibeer, Gavin

AU - Green, Martin

AU - Cho, Eun-Chel

AU - König, Dirk

AU - Cho, Young-Hyun

AU - Fangsuwannarak, Thipwan

AU - Scardera, Giuseppe

AU - Pink, Edwin

AU - Huang, Yidan

AU - Puzzer, Tom

AU - Huang, Shujuan

AU - Song, Dengyuan

AU - Flynn, Chris

AU - Park, Sangwook

AU - Hao, Xiaojing

AU - Mansfield, Daniel

N1 - Date of conference unknown.

PY - 2008/8/30

Y1 - 2008/8/30

N2 - Tandem PV cells - with their increased efficiency due to a multi-band gap approach - usually involve expensive materials and fabrication. Thin film approaches, with an engineered variation in band gap through the use of quantum confinement in Si quantum dots, offer a cheaper alternative. Presented are characterisation and modelling data on fabrication of such Si and Sn QD nanostructures in various dielectric matrices by self-organised thin film deposition, with demonstrated confined energy levels of 1.7 eV for 2 nm diameter QDs. This being the optimum energy for an upper tandem cell element.

AB - Tandem PV cells - with their increased efficiency due to a multi-band gap approach - usually involve expensive materials and fabrication. Thin film approaches, with an engineered variation in band gap through the use of quantum confinement in Si quantum dots, offer a cheaper alternative. Presented are characterisation and modelling data on fabrication of such Si and Sn QD nanostructures in various dielectric matrices by self-organised thin film deposition, with demonstrated confined energy levels of 1.7 eV for 2 nm diameter QDs. This being the optimum energy for an upper tandem cell element.

KW - Quantum dots

KW - Thin film

KW - Third generation

KW - Quantum confinement

UR - http://www.scopus.com/inward/record.url?scp=45849090432&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.12.096

DO - 10.1016/j.tsf.2007.12.096

M3 - Conference paper

AN - SCOPUS:45849090432

SN - 0040-6090

VL - 516

SP - 6748

EP - 6756

JO - Thin Solid Films

JF - Thin Solid Films

IS - 20

T2 - Advanced Materials and Concepts for Photovoltaics 2007

Y2 - 1 June 2007 through 1 June 2007

ER -

Silicon quantum dot nanostructures for tandem photovoltaic cells

Abstract

Bibliographical note

Keywords

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