Silicon quantum dots in a dielectric matrix for all-silicon tandem solar cells

Eun-Chel Cho, Martin A. Green, Gavin Conibeer, Dengyuan Song, Young-Hyun Cho, Giuseppe Scardera, Shujuan Huang, Sangwook Park, X. J. Hao, Yidan Huang, Lap Van Dao

Research output: Contribution to journalArticle

100 Citations (Scopus)

Abstract

We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4nm dot with increasing detection wavelength.

Original languageEnglish
Article number69578
Number of pages11
JournalAdvances in OptoElectronics
Volume2007
DOIs
Publication statusPublished - 2007
Externally publishedYes

Bibliographical note

Copyright the Author(s) 2007. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

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    Cho, E-C., Green, M. A., Conibeer, G., Song, D., Cho, Y-H., Scardera, G., ... Van Dao, L. (2007). Silicon quantum dots in a dielectric matrix for all-silicon tandem solar cells. Advances in OptoElectronics, 2007, [69578]. https://doi.org/10.1155/2007/69578