Simulation of HEMT DC drain current and 1 to 50 GHz S-parameters as a function of gate bias

Simon J. Mahon; Michael  J. Chivers; David J. Skellern

doi:10.1109/22.238526

Simulation of HEMT DC drain current and 1 to 50 GHz S-parameters as a function of gate bias

Simon J. Mahon, Michael J. Chivers, David J. Skellern

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2 Citations (Scopus)

Abstract

The usefulness over an extended range of a HEMT model previously validated for 1 to 25 GHz s-parameter model is shown. Experimental and simulation results for the dc drain current and 1-50 GHz δ-parameters of a pseudomorphic 032-μm-gate AIGaAs/InGaAs/GaAs HEMT are presented. The model predicts the device's dc current and δ-parameters as a function of the applied gate bias with good accuracy. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. As part of the modeling procedure, a value of (1.77 ± 0.07) × 105 m. s-1 is found, confirming the results of other research, for the electron velocity in undoped pseudomorphic Ino.15Gao.85 As under ≈ 0.3 μm gates.

Original language	English
Pages (from-to)	1065-1067
Number of pages	3
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	41
Issue number	6
DOIs	https://doi.org/10.1109/22.238526
Publication status	Published - 1993

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title = "Simulation of HEMT DC drain current and 1 to 50 GHz S-parameters as a function of gate bias",

abstract = "The usefulness over an extended range of a HEMT model previously validated for 1 to 25 GHz s-parameter model is shown. Experimental and simulation results for the dc drain current and 1-50 GHz δ-parameters of a pseudomorphic 032-μm-gate AIGaAs/InGaAs/GaAs HEMT are presented. The model predicts the device's dc current and δ-parameters as a function of the applied gate bias with good accuracy. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. As part of the modeling procedure, a value of (1.77 ± 0.07) × 105 m. s-1 is found, confirming the results of other research, for the electron velocity in undoped pseudomorphic Ino.15Gao.85 As under ≈ 0.3 μm gates.",

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year = "1993",

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T1 - Simulation of HEMT DC drain current and 1 to 50 GHz S-parameters as a function of gate bias

AU - Mahon, Simon J.

AU - Chivers, Michael J.

AU - Skellern, David J.

PY - 1993

Y1 - 1993

N2 - The usefulness over an extended range of a HEMT model previously validated for 1 to 25 GHz s-parameter model is shown. Experimental and simulation results for the dc drain current and 1-50 GHz δ-parameters of a pseudomorphic 032-μm-gate AIGaAs/InGaAs/GaAs HEMT are presented. The model predicts the device's dc current and δ-parameters as a function of the applied gate bias with good accuracy. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. As part of the modeling procedure, a value of (1.77 ± 0.07) × 105 m. s-1 is found, confirming the results of other research, for the electron velocity in undoped pseudomorphic Ino.15Gao.85 As under ≈ 0.3 μm gates.

AB - The usefulness over an extended range of a HEMT model previously validated for 1 to 25 GHz s-parameter model is shown. Experimental and simulation results for the dc drain current and 1-50 GHz δ-parameters of a pseudomorphic 032-μm-gate AIGaAs/InGaAs/GaAs HEMT are presented. The model predicts the device's dc current and δ-parameters as a function of the applied gate bias with good accuracy. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. As part of the modeling procedure, a value of (1.77 ± 0.07) × 105 m. s-1 is found, confirming the results of other research, for the electron velocity in undoped pseudomorphic Ino.15Gao.85 As under ≈ 0.3 μm gates.

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JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

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Simulation of HEMT DC drain current and 1 to 50 GHz S-parameters as a function of gate bias

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