The usefulness over an extended range of a HEMT model previously validated for 1 to 25 GHz s-parameter model is shown. Experimental and simulation results for the dc drain current and 1-50 GHz δ-parameters of a pseudomorphic 032-μm-gate AIGaAs/InGaAs/GaAs HEMT are presented. The model predicts the device's dc current and δ-parameters as a function of the applied gate bias with good accuracy. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. As part of the modeling procedure, a value of (1.77 ± 0.07) × 105 m. s-1 is found, confirming the results of other research, for the electron velocity in undoped pseudomorphic Ino.15Gao.85 As under ≈ 0.3 μm gates.
|Number of pages||3|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|Publication status||Published - 1993|