Simulation of solar cells employing 2 dimensional transition metal dichalcogenide - silicon front surfaces

Jing Zhao; Yuanfeng Xu; Fajun Ma; Anita Ho-Baillie; Hao Zhang; Stephen Bremner

doi:10.1109/PVSC.2018.8547793

Simulation of solar cells employing 2 dimensional transition metal dichalcogenide - silicon front surfaces

Jing Zhao, Yuanfeng Xu, Fajun Ma, Anita Ho-Baillie, Hao Zhang, Stephen Bremner

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

3 Citations (Scopus)

Abstract

Transition metal dichalcogenides are a promising avenue for fabricating high performance silicon in a simplified manner, by exploiting their two dimensional properties. This paper looks at simulating monolayers of four such materials on silicon, namely molybdenum disulfide and diselenide, and tungsten disulfide and diselenide. Materials parameters determined by density functional theory were used in a semiconductor device simulator, TCAD, to assess the potential performances for solar cells using these layers as a front surface contact layer. Results are presented for molybdenum disulfide on both n and p type silicon, showing a kink in the current-voltage curve already reported in the literature. A potential efficiency of 19.2% is identified for an n type molybdenum disulfide on p type silicon device.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	2092-2096
Number of pages	5
ISBN (Electronic)	9781538685297
ISBN (Print)	9781538685303
DOIs	https://doi.org/10.1109/PVSC.2018.8547793
Publication status	Published - 2018
Externally published	Yes
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Publication series

Name
ISSN (Print)	0160-8371

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

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10.1109/PVSC.2018.8547793

Cite this

Zhao, J., Xu, Y., Ma, F., Ho-Baillie, A., Zhang, H., & Bremner, S. (2018). Simulation of solar cells employing 2 dimensional transition metal dichalcogenide - silicon front surfaces. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC) (pp. 2092-2096). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PVSC.2018.8547793

Zhao, Jing ; Xu, Yuanfeng ; Ma, Fajun et al. / Simulation of solar cells employing 2 dimensional transition metal dichalcogenide - silicon front surfaces. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2018. pp. 2092-2096

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abstract = "Transition metal dichalcogenides are a promising avenue for fabricating high performance silicon in a simplified manner, by exploiting their two dimensional properties. This paper looks at simulating monolayers of four such materials on silicon, namely molybdenum disulfide and diselenide, and tungsten disulfide and diselenide. Materials parameters determined by density functional theory were used in a semiconductor device simulator, TCAD, to assess the potential performances for solar cells using these layers as a front surface contact layer. Results are presented for molybdenum disulfide on both n and p type silicon, showing a kink in the current-voltage curve already reported in the literature. A potential efficiency of 19.2% is identified for an n type molybdenum disulfide on p type silicon device.",

author = "Jing Zhao and Yuanfeng Xu and Fajun Ma and Anita Ho-Baillie and Hao Zhang and Stephen Bremner",

year = "2018",

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Zhao, J, Xu, Y, Ma, F, Ho-Baillie, A, Zhang, H & Bremner, S 2018, Simulation of solar cells employing 2 dimensional transition metal dichalcogenide - silicon front surfaces. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 2092-2096, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18. https://doi.org/10.1109/PVSC.2018.8547793

Simulation of solar cells employing 2 dimensional transition metal dichalcogenide - silicon front surfaces. / Zhao, Jing; Xu, Yuanfeng; Ma, Fajun et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 2092-2096.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Zhao, Jing

AU - Xu, Yuanfeng

AU - Ma, Fajun

AU - Ho-Baillie, Anita

AU - Zhang, Hao

AU - Bremner, Stephen

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N2 - Transition metal dichalcogenides are a promising avenue for fabricating high performance silicon in a simplified manner, by exploiting their two dimensional properties. This paper looks at simulating monolayers of four such materials on silicon, namely molybdenum disulfide and diselenide, and tungsten disulfide and diselenide. Materials parameters determined by density functional theory were used in a semiconductor device simulator, TCAD, to assess the potential performances for solar cells using these layers as a front surface contact layer. Results are presented for molybdenum disulfide on both n and p type silicon, showing a kink in the current-voltage curve already reported in the literature. A potential efficiency of 19.2% is identified for an n type molybdenum disulfide on p type silicon device.

AB - Transition metal dichalcogenides are a promising avenue for fabricating high performance silicon in a simplified manner, by exploiting their two dimensional properties. This paper looks at simulating monolayers of four such materials on silicon, namely molybdenum disulfide and diselenide, and tungsten disulfide and diselenide. Materials parameters determined by density functional theory were used in a semiconductor device simulator, TCAD, to assess the potential performances for solar cells using these layers as a front surface contact layer. Results are presented for molybdenum disulfide on both n and p type silicon, showing a kink in the current-voltage curve already reported in the literature. A potential efficiency of 19.2% is identified for an n type molybdenum disulfide on p type silicon device.

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BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC)

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Zhao J, Xu Y, Ma F, Ho-Baillie A, Zhang H, Bremner S. Simulation of solar cells employing 2 dimensional transition metal dichalcogenide - silicon front surfaces. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2018. p. 2092-2096 doi: 10.1109/PVSC.2018.8547793

Simulation of solar cells employing 2 dimensional transition metal dichalcogenide - silicon front surfaces

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