Simulation of solar cells employing 2 dimensional transition metal dichalcogenide - silicon front surfaces

Jing Zhao, Yuanfeng Xu, Fajun Ma, Anita Ho-Baillie, Hao Zhang, Stephen Bremner

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

Transition metal dichalcogenides are a promising avenue for fabricating high performance silicon in a simplified manner, by exploiting their two dimensional properties. This paper looks at simulating monolayers of four such materials on silicon, namely molybdenum disulfide and diselenide, and tungsten disulfide and diselenide. Materials parameters determined by density functional theory were used in a semiconductor device simulator, TCAD, to assess the potential performances for solar cells using these layers as a front surface contact layer. Results are presented for molybdenum disulfide on both n and p type silicon, showing a kink in the current-voltage curve already reported in the literature. A potential efficiency of 19.2% is identified for an n type molybdenum disulfide on p type silicon device.

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages2092-2096
Number of pages5
ISBN (Electronic)9781538685297
ISBN (Print)9781538685303
DOIs
Publication statusPublished - 2018
Externally publishedYes
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Publication series

Name
ISSN (Print)0160-8371

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village
Period10/06/1815/06/18

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