Single-layer bandpass actlve frequency selective surface

Ghaffer I. Kiani; Kenneth L. Ford; Karu P. Esselle; Andrew R. Weily; C. Panagamuwa; John C. Batchelor

doi:10.1002/mop.23615

Single-layer bandpass actlve frequency selective surface

Ghaffer I. Kiani, Kenneth L. Ford, Karu P. Esselle, Andrew R. Weily, C. Panagamuwa, John C. Batchelor

Faculty of Science and Engineering

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

A single-layer, bandpass, active FSS is presented. It shows good angle of incidence stability for TE incidence, at the operating frequency of 2.45 GHz. It is based on circular loop aperture with each unit cell having four PIN diodes. A novel method for dc biasing is used. About 12 dB average variation in transmission loss, between ON and OFF states, has been experimentally achieved at 2.45 GHz.

Original language	English
Pages (from-to)	2149-2151
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	50
Issue number	8
DOIs	https://doi.org/10.1002/mop.23615
Publication status	Published - Aug 2008

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10.1002/mop.23615

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abstract = "A single-layer, bandpass, active FSS is presented. It shows good angle of incidence stability for TE incidence, at the operating frequency of 2.45 GHz. It is based on circular loop aperture with each unit cell having four PIN diodes. A novel method for dc biasing is used. About 12 dB average variation in transmission loss, between ON and OFF states, has been experimentally achieved at 2.45 GHz.",

author = "Kiani, {Ghaffer I.} and Ford, {Kenneth L.} and Esselle, {Karu P.} and Weily, {Andrew R.} and C. Panagamuwa and Batchelor, {John C.}",

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AU - Kiani, Ghaffer I.

AU - Ford, Kenneth L.

AU - Esselle, Karu P.

AU - Weily, Andrew R.

AU - Panagamuwa, C.

AU - Batchelor, John C.

PY - 2008/8

Y1 - 2008/8

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AB - A single-layer, bandpass, active FSS is presented. It shows good angle of incidence stability for TE incidence, at the operating frequency of 2.45 GHz. It is based on circular loop aperture with each unit cell having four PIN diodes. A novel method for dc biasing is used. About 12 dB average variation in transmission loss, between ON and OFF states, has been experimentally achieved at 2.45 GHz.

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VL - 50

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JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

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Single-layer bandpass actlve frequency selective surface

Abstract

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