Single nanowire green InGaN/GaN light emitting diodes

Guogang Zhang; Ziyuan Li; Xiaoming Yuan; Fan Wang; Lan Fu; Zhe Zhuang; Fang Fang Ren; Bin Liu; Rong Zhang; Hark Hoe Tan; Chennupati Jagadish

doi:10.1088/0957-4484/27/43/435205

Single nanowire green InGaN/GaN light emitting diodes

Guogang Zhang, Ziyuan Li, Xiaoming Yuan, Fan Wang, Lan Fu, Zhe Zhuang, Fang Fang Ren, Bin Liu, Rong Zhang, Hark Hoe Tan, Chennupati Jagadish

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

Original language	English
Article number	435205
Pages (from-to)	1-7
Number of pages	8
Journal	Nanotechnology
Volume	27
Issue number	43
DOIs	https://doi.org/10.1088/0957-4484/27/43/435205
Publication status	Published - 28 Oct 2016
Externally published	Yes

Keywords

electroluminescence
InGaN/GaN
light-emitting diodes
nanowire

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10.1088/0957-4484/27/43/435205

Cite this

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title = "Single nanowire green InGaN/GaN light emitting diodes",

abstract = "Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.",

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author = "Guogang Zhang and Ziyuan Li and Xiaoming Yuan and Fan Wang and Lan Fu and Zhe Zhuang and Ren, {Fang Fang} and Bin Liu and Rong Zhang and Tan, {Hark Hoe} and Chennupati Jagadish",

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T1 - Single nanowire green InGaN/GaN light emitting diodes

AU - Zhang, Guogang

AU - Li, Ziyuan

AU - Yuan, Xiaoming

AU - Wang, Fan

AU - Fu, Lan

AU - Zhuang, Zhe

AU - Ren, Fang Fang

AU - Liu, Bin

AU - Zhang, Rong

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2016/10/28

Y1 - 2016/10/28

N2 - Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

AB - Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

KW - electroluminescence

KW - InGaN/GaN

KW - light-emitting diodes

KW - nanowire

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U2 - 10.1088/0957-4484/27/43/435205

DO - 10.1088/0957-4484/27/43/435205

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JF - Nanotechnology

IS - 43

M1 - 435205

ER -

Single nanowire green InGaN/GaN light emitting diodes

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Keywords

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