Single nanowire green InGaN/GaN light emitting diodes

Guogang Zhang, Ziyuan Li, Xiaoming Yuan, Fan Wang, Lan Fu, Zhe Zhuang, Fang Fang Ren, Bin Liu, Rong Zhang, Hark Hoe Tan, Chennupati Jagadish

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

Original languageEnglish
Article number435205
Pages (from-to)1-7
Number of pages8
JournalNanotechnology
Volume27
Issue number43
DOIs
Publication statusPublished - 28 Oct 2016
Externally publishedYes

Keywords

  • electroluminescence
  • InGaN/GaN
  • light-emitting diodes
  • nanowire

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  • Cite this

    Zhang, G., Li, Z., Yuan, X., Wang, F., Fu, L., Zhuang, Z., ... Jagadish, C. (2016). Single nanowire green InGaN/GaN light emitting diodes. Nanotechnology, 27(43), 1-7. [435205]. https://doi.org/10.1088/0957-4484/27/43/435205