Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates

S. Minari*, L. Cavigli, F. Sarti, M. Abbarchi, N. Accanto, G. Muñoz Matutano, S. Bietti, S. Sanguinetti, A. Vinattieri, M. Gurioli

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and unintentional contamination with acceptors of the AlGaAs. Very bright and sharp single photoluminescence lines are observed in confocal microscopy. These lines behave very much as single excitons in quantum dots, but their implementation is by far much easier, since it does not require 3D nucleation. The photon antibunching is demonstrated by time resolved Hanbury Brown and Twiss measurements.

Original languageEnglish
Article number172105
Number of pages4
JournalApplied Physics Letters
Volume101
Issue number17
DOIs
Publication statusPublished - 22 Oct 2012
Externally publishedYes

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