Single photon emission from site-controlled InAs quantum dots grown on GaAs(001) patterned substrates

J. Martín-Sánchez; G. Muñoz-Matutano; J. Herranz; J. Canet-Ferrer; B. Alén; Y. González; P. Alonso-González; D. Fuster; L. González; J. Martínez-Pastor; F. Briones

doi:10.1021/nn9001566

Single photon emission from site-controlled InAs quantum dots grown on GaAs(001) patterned substrates

J. Martín-Sánchez^*, G. Muñoz-Matutano, J. Herranz, J. Canet-Ferrer, B. Alén, Y. González, P. Alonso-González, D. Fuster, L. González, J. Martínez-Pastor, F. Briones

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication process present a high optical quality which we have evaluated by microphotoluminescence and photon correlation experiments.

Original language	English
Pages (from-to)	1513-1517
Number of pages	5
Journal	ACS Nano
Volume	3
Issue number	6
DOIs	https://doi.org/10.1021/nn9001566
Publication status	Published - 23 Jun 2009
Externally published	Yes

Keywords

Patterned substrates
Quantum dots
Single photon emitters

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10.1021/nn9001566

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title = "Single photon emission from site-controlled InAs quantum dots grown on GaAs(001) patterned substrates",

abstract = "We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication process present a high optical quality which we have evaluated by microphotoluminescence and photon correlation experiments.",

keywords = "Patterned substrates, Quantum dots, Single photon emitters",

author = "J. Mart{\'i}n-S{\'a}nchez and G. Mu{\~n}oz-Matutano and J. Herranz and J. Canet-Ferrer and B. Al{\'e}n and Y. Gonz{\'a}lez and P. Alonso-Gonz{\'a}lez and D. Fuster and L. Gonz{\'a}lez and J. Mart{\'i}nez-Pastor and F. Briones",

year = "2009",

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doi = "10.1021/nn9001566",

language = "English",

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T1 - Single photon emission from site-controlled InAs quantum dots grown on GaAs(001) patterned substrates

AU - Martín-Sánchez, J.

AU - Muñoz-Matutano, G.

AU - Herranz, J.

AU - Canet-Ferrer, J.

AU - Alén, B.

AU - González, Y.

AU - Alonso-González, P.

AU - Fuster, D.

AU - González, L.

AU - Martínez-Pastor, J.

AU - Briones, F.

PY - 2009/6/23

Y1 - 2009/6/23

N2 - We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication process present a high optical quality which we have evaluated by microphotoluminescence and photon correlation experiments.

AB - We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication process present a high optical quality which we have evaluated by microphotoluminescence and photon correlation experiments.

KW - Patterned substrates

KW - Quantum dots

KW - Single photon emitters

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JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 6

ER -

Single photon emission from site-controlled InAs quantum dots grown on GaAs(001) patterned substrates

Abstract

Keywords

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