Single photon emission from site-controlled InAs quantum dots grown on GaAs(001) patterned substrates

J. Martín-Sánchez*, G. Muñoz-Matutano, J. Herranz, J. Canet-Ferrer, B. Alén, Y. González, P. Alonso-González, D. Fuster, L. González, J. Martínez-Pastor, F. Briones

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)

Abstract

We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication process present a high optical quality which we have evaluated by microphotoluminescence and photon correlation experiments.

Original languageEnglish
Pages (from-to)1513-1517
Number of pages5
JournalACS Nano
Volume3
Issue number6
DOIs
Publication statusPublished - 23 Jun 2009
Externally publishedYes

Keywords

  • Patterned substrates
  • Quantum dots
  • Single photon emitters

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