Abstract
We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication process present a high optical quality which we have evaluated by microphotoluminescence and photon correlation experiments.
Original language | English |
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Pages (from-to) | 1513-1517 |
Number of pages | 5 |
Journal | ACS Nano |
Volume | 3 |
Issue number | 6 |
DOIs | |
Publication status | Published - 23 Jun 2009 |
Externally published | Yes |
Keywords
- Patterned substrates
- Quantum dots
- Single photon emitters