Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates

L. Seravalli*, G. Trevisi, P. Frigeri, D. Rivas, G. Muñoz-Matutano, I. Suárez, B. Aĺn, J. Canet, J. P. Martínez-Pastor

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

We report on the growth by molecular beam epitaxy and the study by atomic force microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots. subcritical InAs coverages allow to obtain 108 cm -2 dot density and metamorphic InxGa1-x As (x=0.15,0.30) confining layers result in emission wavelengths at 1.3 μm. We discuss optimal growth parameters and demonstrate single quantum dot emission up to 1350 nm at low temperatures, by distinguishing the main exciton complexes in these nanostructures. Reported results indicate that metamorphic quantum dots could be valuable candidates as single photon sources for long wavelength telecom windows.

Original languageEnglish
Article number173112
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number17
DOIs
Publication statusPublished - 25 Apr 2011
Externally publishedYes

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