Single Si-V-centers in low-strain nanodiamonds with bulklike spectral properties and nanomanipulation capabilities

Lachlan J. Rogers, Ou Wang, Yan Liu, Lukas Antoniuk, Christian Osterkamp, Valery A. Davydov, Viatcheslav N. Agafonov, Andrea B. Filipovski, Fedor Jelezko, Alexander Kubanek

Research output: Contribution to journalArticleResearchpeer-review

Abstract

We report on the isolation of single negatively-charged-silicon-vacancy (Si-V-) centers in nanodiamonds. We observe the fine structure of single Si-V-centers with reduced inhomogeneous ensemble linewidth below the excited-state splitting, stable optical transitions, good polarization contrast, and excellent spectral stability under resonant excitation. On the basis of our experimental results, we develop an analytical strain model where we extract the ratio between strain coefficients of excited and ground states as well the intrinsic zero-strain spin-orbit splittings. The observed strain values are as low as the best values in low-strain bulk diamond. We achieve our results by means of H-plasma treatment of the diamond surface and in combination with resonant and off-resonant excitation. Our work paves the way for indistinguishable, single-photon emission. Furthermore, we demonstrate controlled nanomanipulation by an atomic-force-microscope cantilever of one-A nd two-dimensional alignments with an accuracy of about 10 nm, as well as new tools including dipole rotation and cluster decomposition. Combined, our results show the potential to utilize Si-V-centers in nanodiamonds for controlled interfacing via optical coupling of individually-well-isolated atoms for bottom-up assemblies of complex quantum systems.

LanguageEnglish
Article number024073
Pages1-17
Number of pages17
JournalPhysical Review Applied
Volume11
Issue number2
DOIs
Publication statusPublished - 28 Feb 2019

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excitation
diamonds
optical coupling
optical transition
assemblies
isolation
fine structure
alignment
microscopes
dipoles
orbits
decomposition
ground state
photons
silicon
polarization
coefficients
atoms

Cite this

Rogers, Lachlan J. ; Wang, Ou ; Liu, Yan ; Antoniuk, Lukas ; Osterkamp, Christian ; Davydov, Valery A. ; Agafonov, Viatcheslav N. ; Filipovski, Andrea B. ; Jelezko, Fedor ; Kubanek, Alexander. / Single Si-V-centers in low-strain nanodiamonds with bulklike spectral properties and nanomanipulation capabilities. In: Physical Review Applied. 2019 ; Vol. 11, No. 2. pp. 1-17.
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title = "Single Si-V-centers in low-strain nanodiamonds with bulklike spectral properties and nanomanipulation capabilities",
abstract = "We report on the isolation of single negatively-charged-silicon-vacancy (Si-V-) centers in nanodiamonds. We observe the fine structure of single Si-V-centers with reduced inhomogeneous ensemble linewidth below the excited-state splitting, stable optical transitions, good polarization contrast, and excellent spectral stability under resonant excitation. On the basis of our experimental results, we develop an analytical strain model where we extract the ratio between strain coefficients of excited and ground states as well the intrinsic zero-strain spin-orbit splittings. The observed strain values are as low as the best values in low-strain bulk diamond. We achieve our results by means of H-plasma treatment of the diamond surface and in combination with resonant and off-resonant excitation. Our work paves the way for indistinguishable, single-photon emission. Furthermore, we demonstrate controlled nanomanipulation by an atomic-force-microscope cantilever of one-A nd two-dimensional alignments with an accuracy of about 10 nm, as well as new tools including dipole rotation and cluster decomposition. Combined, our results show the potential to utilize Si-V-centers in nanodiamonds for controlled interfacing via optical coupling of individually-well-isolated atoms for bottom-up assemblies of complex quantum systems.",
author = "Rogers, {Lachlan J.} and Ou Wang and Yan Liu and Lukas Antoniuk and Christian Osterkamp and Davydov, {Valery A.} and Agafonov, {Viatcheslav N.} and Filipovski, {Andrea B.} and Fedor Jelezko and Alexander Kubanek",
year = "2019",
month = "2",
day = "28",
doi = "10.1103/PhysRevApplied.11.024073",
language = "English",
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Rogers, LJ, Wang, O, Liu, Y, Antoniuk, L, Osterkamp, C, Davydov, VA, Agafonov, VN, Filipovski, AB, Jelezko, F & Kubanek, A 2019, 'Single Si-V-centers in low-strain nanodiamonds with bulklike spectral properties and nanomanipulation capabilities', Physical Review Applied, vol. 11, no. 2, 024073, pp. 1-17. https://doi.org/10.1103/PhysRevApplied.11.024073

Single Si-V-centers in low-strain nanodiamonds with bulklike spectral properties and nanomanipulation capabilities. / Rogers, Lachlan J.; Wang, Ou; Liu, Yan; Antoniuk, Lukas; Osterkamp, Christian; Davydov, Valery A.; Agafonov, Viatcheslav N.; Filipovski, Andrea B.; Jelezko, Fedor; Kubanek, Alexander.

In: Physical Review Applied, Vol. 11, No. 2, 024073, 28.02.2019, p. 1-17.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Single Si-V-centers in low-strain nanodiamonds with bulklike spectral properties and nanomanipulation capabilities

AU - Rogers, Lachlan J.

AU - Wang, Ou

AU - Liu, Yan

AU - Antoniuk, Lukas

AU - Osterkamp, Christian

AU - Davydov, Valery A.

AU - Agafonov, Viatcheslav N.

AU - Filipovski, Andrea B.

AU - Jelezko, Fedor

AU - Kubanek, Alexander

PY - 2019/2/28

Y1 - 2019/2/28

N2 - We report on the isolation of single negatively-charged-silicon-vacancy (Si-V-) centers in nanodiamonds. We observe the fine structure of single Si-V-centers with reduced inhomogeneous ensemble linewidth below the excited-state splitting, stable optical transitions, good polarization contrast, and excellent spectral stability under resonant excitation. On the basis of our experimental results, we develop an analytical strain model where we extract the ratio between strain coefficients of excited and ground states as well the intrinsic zero-strain spin-orbit splittings. The observed strain values are as low as the best values in low-strain bulk diamond. We achieve our results by means of H-plasma treatment of the diamond surface and in combination with resonant and off-resonant excitation. Our work paves the way for indistinguishable, single-photon emission. Furthermore, we demonstrate controlled nanomanipulation by an atomic-force-microscope cantilever of one-A nd two-dimensional alignments with an accuracy of about 10 nm, as well as new tools including dipole rotation and cluster decomposition. Combined, our results show the potential to utilize Si-V-centers in nanodiamonds for controlled interfacing via optical coupling of individually-well-isolated atoms for bottom-up assemblies of complex quantum systems.

AB - We report on the isolation of single negatively-charged-silicon-vacancy (Si-V-) centers in nanodiamonds. We observe the fine structure of single Si-V-centers with reduced inhomogeneous ensemble linewidth below the excited-state splitting, stable optical transitions, good polarization contrast, and excellent spectral stability under resonant excitation. On the basis of our experimental results, we develop an analytical strain model where we extract the ratio between strain coefficients of excited and ground states as well the intrinsic zero-strain spin-orbit splittings. The observed strain values are as low as the best values in low-strain bulk diamond. We achieve our results by means of H-plasma treatment of the diamond surface and in combination with resonant and off-resonant excitation. Our work paves the way for indistinguishable, single-photon emission. Furthermore, we demonstrate controlled nanomanipulation by an atomic-force-microscope cantilever of one-A nd two-dimensional alignments with an accuracy of about 10 nm, as well as new tools including dipole rotation and cluster decomposition. Combined, our results show the potential to utilize Si-V-centers in nanodiamonds for controlled interfacing via optical coupling of individually-well-isolated atoms for bottom-up assemblies of complex quantum systems.

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U2 - 10.1103/PhysRevApplied.11.024073

DO - 10.1103/PhysRevApplied.11.024073

M3 - Article

VL - 11

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JO - Physical Review Applied

T2 - Physical Review Applied

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SN - 2331-7019

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