Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

G. Muñoz-Matutano*, I. Suárez, J. Canet-Ferrer, B. Alén, D. Rivas, L. Seravalli, G. Trevisi, P. Frigeri, J. Martínez-Pastor

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples.

Original languageEnglish
Article number123522
Pages (from-to)1-8
Number of pages8
JournalJournal of Applied Physics
Volume111
Issue number12
DOIs
Publication statusPublished - 15 Jun 2012
Externally publishedYes

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