Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

G. Muñoz-Matutano; I. Suárez; J. Canet-Ferrer; B. Alén; D. Rivas; L. Seravalli; G. Trevisi; P. Frigeri; J. Martínez-Pastor

doi:10.1063/1.4729315

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

G. Muñoz-Matutano^*, I. Suárez, J. Canet-Ferrer, B. Alén, D. Rivas, L. Seravalli, G. Trevisi, P. Frigeri, J. Martínez-Pastor

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples.

Original language	English
Article number	123522
Pages (from-to)	1-8
Number of pages	8
Journal	Journal of Applied Physics
Volume	111
Issue number	12
DOIs	https://doi.org/10.1063/1.4729315
Publication status	Published - 15 Jun 2012
Externally published	Yes

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abstract = "We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples.",

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AU - Muñoz-Matutano, G.

AU - Suárez, I.

AU - Canet-Ferrer, J.

AU - Alén, B.

AU - Rivas, D.

AU - Seravalli, L.

AU - Trevisi, G.

AU - Frigeri, P.

AU - Martínez-Pastor, J.

PY - 2012/6/15

Y1 - 2012/6/15

N2 - We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples.

AB - We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples.

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Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

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