SLC-ASM-HEMT: an accurate compact model for SLCFET RF switch

Sourabh Khandelwal*, Brian Novak, Jordan Merkel, Ken Nagamatsu, Justin Parke, Mark Yu, Patrick Shea, Robert Howell

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

Accurate compact model for simulating radiofrequency (RF) switch characteristics of a Super Lattice Castellated Field Effect Transistor (SLCFET) is presented. The new model is developed by modifying the industry standard ASM-HEMT compact model formulations. It is found that multiple channels of SLCFET cause unique I-V and S-parameters behavior of this technology. An accurate, and computationally efficient compact model is obtained after modifying ASM-HEMT formulations for multi-channel device electrostatics in SLCFET. The model is shown to be in good agreement with measurements for DC and RF device characteristics.

Original languageEnglish
Title of host publication2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Chapter4
ISBN (Electronic)9781728197494
ISBN (Print)9781728197500
DOIs
Publication statusPublished - 2020
Externally publishedYes
Event2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020 - Monterey, United States
Duration: 16 Nov 202019 Nov 2020

Conference

Conference2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
CountryUnited States
CityMonterey
Period16/11/2019/11/20

Fingerprint Dive into the research topics of 'SLC-ASM-HEMT: an accurate compact model for SLCFET RF switch'. Together they form a unique fingerprint.

Cite this