SLC-ASM-HEMT: an accurate compact model for SLCFET RF switch

Sourabh Khandelwal; Brian Novak; Jordan Merkel; Ken Nagamatsu; Justin Parke; Mark Yu; Patrick Shea; Robert Howell

doi:10.1109/BCICTS48439.2020.9392941

SLC-ASM-HEMT: an accurate compact model for SLCFET RF switch

Sourabh Khandelwal^*, Brian Novak, Jordan Merkel, Ken Nagamatsu, Justin Parke, Mark Yu, Patrick Shea, Robert Howell

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

Abstract

Accurate compact model for simulating radiofrequency (RF) switch characteristics of a Super Lattice Castellated Field Effect Transistor (SLCFET) is presented. The new model is developed by modifying the industry standard ASM-HEMT compact model formulations. It is found that multiple channels of SLCFET cause unique I-V and S-parameters behavior of this technology. An accurate, and computationally efficient compact model is obtained after modifying ASM-HEMT formulations for multi-channel device electrostatics in SLCFET. The model is shown to be in good agreement with measurements for DC and RF device characteristics.

Original language	English
Title of host publication	2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Chapter	4
Number of pages	4
ISBN (Electronic)	9781728197494
ISBN (Print)	9781728197500
DOIs	https://doi.org/10.1109/BCICTS48439.2020.9392941
Publication status	Published - 2020
Externally published	Yes
Event	2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020 - Monterey, United States Duration: 16 Nov 2020 → 19 Nov 2020

Conference

Conference	2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
Country/Territory	United States
City	Monterey
Period	16/11/20 → 19/11/20

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10.1109/BCICTS48439.2020.9392941

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Khandelwal, S., Novak, B., Merkel, J., Nagamatsu, K., Parke, J., Yu, M., Shea, P., & Howell, R. (2020). SLC-ASM-HEMT: an accurate compact model for SLCFET RF switch. In 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/BCICTS48439.2020.9392941

@inproceedings{66115ba952fb4ae59fbe9f05c80a1e51,

title = "SLC-ASM-HEMT: an accurate compact model for SLCFET RF switch",

abstract = "Accurate compact model for simulating radiofrequency (RF) switch characteristics of a Super Lattice Castellated Field Effect Transistor (SLCFET) is presented. The new model is developed by modifying the industry standard ASM-HEMT compact model formulations. It is found that multiple channels of SLCFET cause unique I-V and S-parameters behavior of this technology. An accurate, and computationally efficient compact model is obtained after modifying ASM-HEMT formulations for multi-channel device electrostatics in SLCFET. The model is shown to be in good agreement with measurements for DC and RF device characteristics.",

author = "Sourabh Khandelwal and Brian Novak and Jordan Merkel and Ken Nagamatsu and Justin Parke and Mark Yu and Patrick Shea and Robert Howell",

year = "2020",

doi = "10.1109/BCICTS48439.2020.9392941",

language = "English",

isbn = "9781728197500",

booktitle = "2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020 ; Conference date: 16-11-2020 Through 19-11-2020",

}

Khandelwal, S, Novak, B, Merkel, J, Nagamatsu, K, Parke, J, Yu, M, Shea, P & Howell, R 2020, SLC-ASM-HEMT: an accurate compact model for SLCFET RF switch. in 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, United States, 16/11/20. https://doi.org/10.1109/BCICTS48439.2020.9392941

SLC-ASM-HEMT: an accurate compact model for SLCFET RF switch. / Khandelwal, Sourabh; Novak, Brian; Merkel, Jordan et al.
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2020.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - SLC-ASM-HEMT

T2 - 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020

AU - Khandelwal, Sourabh

AU - Novak, Brian

AU - Merkel, Jordan

AU - Nagamatsu, Ken

AU - Parke, Justin

AU - Yu, Mark

AU - Shea, Patrick

AU - Howell, Robert

PY - 2020

Y1 - 2020

N2 - Accurate compact model for simulating radiofrequency (RF) switch characteristics of a Super Lattice Castellated Field Effect Transistor (SLCFET) is presented. The new model is developed by modifying the industry standard ASM-HEMT compact model formulations. It is found that multiple channels of SLCFET cause unique I-V and S-parameters behavior of this technology. An accurate, and computationally efficient compact model is obtained after modifying ASM-HEMT formulations for multi-channel device electrostatics in SLCFET. The model is shown to be in good agreement with measurements for DC and RF device characteristics.

AB - Accurate compact model for simulating radiofrequency (RF) switch characteristics of a Super Lattice Castellated Field Effect Transistor (SLCFET) is presented. The new model is developed by modifying the industry standard ASM-HEMT compact model formulations. It is found that multiple channels of SLCFET cause unique I-V and S-parameters behavior of this technology. An accurate, and computationally efficient compact model is obtained after modifying ASM-HEMT formulations for multi-channel device electrostatics in SLCFET. The model is shown to be in good agreement with measurements for DC and RF device characteristics.

UR - https://www.scopus.com/pages/publications/85104651305

U2 - 10.1109/BCICTS48439.2020.9392941

DO - 10.1109/BCICTS48439.2020.9392941

M3 - Conference proceeding contribution

AN - SCOPUS:85104651305

SN - 9781728197500

BT - 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

Y2 - 16 November 2020 through 19 November 2020

ER -

SLC-ASM-HEMT: an accurate compact model for SLCFET RF switch

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