Abstract
In this paper, a small-signal model of Negative Capacitance FETs (NCFETs) is developed and the analog performance of NCFETs is studied using the developed model. A new ferroelectric factor K is introduced to capture the ferroelectric gain in NCFETs as compared to traditional small signal MOSFET/FinFET models. Using our new NCFET small-signal model, we show analog design trade-offs between various analog benchmarks such as gain, bandwidth, cut-off frequency, and linearity. Additionally, the developed model is used to demonstrate trade-offs in NCFET analog performance as ferroelectric parameters are changed. Results show that if pushed for a higher intrinsic gain via thicker Fe layers in NCFETs, the linearity of the device suffers. This reveals inherent device level trade-off in NCFETs for analog circuit performance.
Original language | English |
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Article number | 108161 |
Pages (from-to) | 1-7 |
Number of pages | 7 |
Journal | Solid-State Electronics |
Volume | 186 |
DOIs | |
Publication status | Published - Dec 2021 |
Keywords
- Negative-capacitance FET (NCFET)
- Ferroelectric layer
- Radio frequency (RF)
- Integrated circuits
- CMOS technology