Small signal model and analog performance analysis of negative capacitance FETs

Hossein Eslahi*, Tara J. Hamilton, Sourabh Khandelwal

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, a small-signal model of Negative Capacitance FETs (NCFETs) is developed and the analog performance of NCFETs is studied using the developed model. A new ferroelectric factor K is introduced to capture the ferroelectric gain in NCFETs as compared to traditional small signal MOSFET/FinFET models. Using our new NCFET small-signal model, we show analog design trade-offs between various analog benchmarks such as gain, bandwidth, cut-off frequency, and linearity. Additionally, the developed model is used to demonstrate trade-offs in NCFET analog performance as ferroelectric parameters are changed. Results show that if pushed for a higher intrinsic gain via thicker Fe layers in NCFETs, the linearity of the device suffers. This reveals inherent device level trade-off in NCFETs for analog circuit performance.

Original languageEnglish
Article number108161
Pages (from-to)1-7
Number of pages7
JournalSolid-State Electronics
Volume186
DOIs
Publication statusPublished - Dec 2021

Keywords

  • Negative-capacitance FET (NCFET)
  • Ferroelectric layer
  • Radio frequency (RF)
  • Integrated circuits
  • CMOS technology

Fingerprint

Dive into the research topics of 'Small signal model and analog performance analysis of negative capacitance FETs'. Together they form a unique fingerprint.

Cite this