In this paper, a small-signal model of Negative Capacitance FETs (NCFETs) is developed and the analog performance of NCFETs is studied using the developed model. A new ferroelectric factor K is introduced to capture the ferroelectric gain in NCFETs as compared to traditional small signal MOSFET/FinFET models. Using our new NCFET small-signal model, we show analog design trade-offs between various analog benchmarks such as gain, bandwidth, cut-off frequency, and linearity. Additionally, the developed model is used to demonstrate trade-offs in NCFET analog performance as ferroelectric parameters are changed. Results show that if pushed for a higher intrinsic gain via thicker Fe layers in NCFETs, the linearity of the device suffers. This reveals inherent device level trade-off in NCFETs for analog circuit performance.
- Negative-capacitance FET (NCFET)
- Ferroelectric layer
- Radio frequency (RF)
- Integrated circuits
- CMOS technology